Concept

Tension de polarisation

Publications associées (120)

A Compact and Low-Power CMOS Circuit for Fully-Integrated NEMS Resonators

Jürgen Brugger, Marc Antonius Friedrich van den Boogaart

This brief presents a fully integrated nanoelectromechanical system (NEMS) resonator, operable at frequencies in the megahertz range, together with a compact built-in CMOS interfacing circuitry. The proposed low-power second-generation current conveyor cir ...

2007

The Equivalent Electron Density Concept for Static and Dynamic Modeling of the IGBT Base in Soft- and Hard-Switching Applications

Alfred Rufer

The transient and static behavior of an insulated gate bipolar transistor (IGBT) are analyzed through finite elements simulations and physically based equations. The standard model using a bipolar transistor driven by a MOSFET is abandoned for three partia ...

2007

New self-switching mechanisms for active bidirectional switches

Alfred Rufer, Philippe Barrade, Daniel Siemaszko

The self-switching principle is a synthesis of synchronous type switching and switch inner protection mechanisms. Both switch ON and switch OFF are performed on the base of current and voltage measurement across the switch. Applied to an active bidirection ...

2007

Beyond the linearity of current-voltage characteristics in multiwalled carbon nanotubes

László Forró, Csilla Mikó

We present local and non-local electron transport measurements on individual multi-wall nanotubes for bias voltages between 0 and about 4 V. Local current–voltage characteristics are quite linear. In contrast, non-local measurements are highly nonlinear; t ...

2006

Compact Modeling of Thermal Noise in the MOS Transistor

Christian Enz, Ananda Sankar Roy

Although some of the recently proposed compact models for thermal noise in MOS transistors exhibit a good match with experimental data, we believe most of the existing compact models suffer from incorrect physical assumptions or modeling (e.g., absence of ...

2005

Conditions of recombination zone splitting in organic light-emitting diodes

Frank Nüesch, Libero Zuppiroli, Detlef Berner, Eduard Tutis, Xiao Wang

We present a theoretical and experimental study of a multilayer organic light emitting device (OLED) with a partially doped emission layer. An extended version of our established "MOLED" device model is used to understand the effects of the partially doped ...

SPIE-Int. Soc. Opt. Eng2004

Solar blind (Al,Ga)N metal-semiconductor-metal devices for high performance flame detection

Nicolas Grandjean, Mauro Mosca

In this work we report on solar blind (Al,Ga)N photovoltaic metal-semiconductor-metal (MSM) detectors with a cutoff wavelength as short as similar to270 nm. (Al,Ga)N heterostructures, that allow backside illumination, were grown on sapphire substrates by b ...

Materials Research Society2003

Overview of recent experimental results on MAST

Olivier Sauter, Yong Yang

The low aspect ratio of the mega amp spherical tokamak (MAST) allows differentiation between different forms of the H-mode threshold scaling. With optimized fuelling using inboard puffing, and a connected double null divertor (DND) magnetic configuration, ...

2003

Fault detection in CMOS/SOI mixed-signal circuits using the quiescent current test

Maher Kayal

Main stream bulk CMOS and the variants of silicon-on-insulator (SOI) CMOS technologies are discussed with respect to testing for the quiescent current of mixed-signal integrated SOI circuits. The 2-3 times lower static power consumption in fully depleted C ...

2002

A Micropower Class-AB CMOS Log-Domain Filter for DECT Applications

Christian Enz

This paper presents a micropower second-order low-pass filter using the log-domain principle and integrated in a 0.35-μm CMOS process. It has been designed as an antialiasing filter for a DECT transceiver with a 45-kHz nominal cutoff frequency. The circuit ...

2001

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