Concept

Architecture 32 bits

Publications associées (32)

Programmable Seizure Detector Using a 32-bit RISC Processor for Implantable Medical Devices

A programmable patient-customized epileptic seizure detector is proposed in this paper to enable neurologists and patients to have constructive interactions with the implantable medical device. The programmability feature is enabled by designing a low-powe ...

IEEE2023

A 3.3-Gb/s SPAD-Based Quantum Random Number Generator

Edoardo Charbon, Pouyan Keshavarzian, Francesco Gramuglia, Mario Stipcevic

Quantum random number generators (QRNGs) are a burgeoning technology used for a variety of applications, including modern security and encryption systems. Typical methods exploit an entropy source combined with an extraction or bit generation circuit in or ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Anonymous Tokens with Stronger Metadata Bit Hiding from Algebraic MACs

Serge Vaudenay, Fatma Betül Durak

On the one hand, the web needs to be secured from malicious activities such as bots or DoS attacks; on the other hand, such needs ideally should not justify services tracking people's activities on the web. Anonymous tokens provide a nice tradeoff between ...

2023

Horizontal side-channel full key recovery on ephemeral SIKE

Natacha Yolande Emmanuel Marie Linard de Guertechin, Aymeric Genet, Novak Kaluderovic

This paper describes the first practical single-trace side-channel power analysis of SIKE. The attack exploits the nature of elliptic curve point addition formulas which require the same function to be executed multiple times. We target the three point lad ...

2021

Write Termination circuits for RRAM : A Holistic Approach From Technology to Application Considerations

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Marco Antonio Rios

While Resistive Random Access Memories (RRAM) are perceived nowadays as a promising solution for the future of computing, these technologies suffer from intrinsic variability regarding programming voltage, switching speed and achieved resistance values. Wr ...

IEEE2020

A Fast, Reliable and Wide-voltage-range In-memory Computing Architecture

David Atienza Alonso, Marina Zapater Sancho, Alexandre Sébastien Julien Levisse, William Andrew Simon

In-Memory Computing (IMC) solutions, and particularly bitline computing in SRAM, appear promising as they mitigate one of the most energy consuming aspects in computation: data movement. In this work we propose a fast (2.4Ghz for bitwise operations and 2.4 ...

Association for Computing Machinery2019

Adaptive simulation-based framework for error characterization of inexact circuits

Vincent Frédéric Camus

To design faster and more energy-efficient systems, numerous inexact arithmetic operators have been proposed, generally obtained by modifying the logic structure of conventional circuits. However, as the quality of service of an application has to be ensur ...

PERGAMON-ELSEVIER SCIENCE LTD2019

Adaptive Receiver Design for High Speed Optical Communication

Ilter Ozkaya

Conventional input/output (IO) links consume power, independent of changes in the bandwidth demand by the system they are deployed in. As the system is designed to satisfy the peak bandwidth demand, most of the time the IO links are idle but still consumin ...

EPFL2018

Model testing beyond the scope of International Standards: an outlook.

François Avellan, Loïc Andolfatto

The roles of hydropower plants within the energy system has been evolving during the last two decades. The potential to provide ancillary services to the grid is often harnessed, leading to a major change in hydropower plants operations. Ancillary services ...

2018

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Mihai Adrian Ionescu, Anna Krammer, Teodor Rosca, Josef Andreas Schuler, Wolfgang Amadeus Vitale, Cem Alper, Arnab Biswas, Emanuele Andrea Casu, Qun Zhao

Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursu ...

Nature Publishing Group2017

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