Publications associées à Diode

Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing

This paper presents experimental results regarding optical and electrical characteristics of a partially gated p-i-n structure that has an extension in the channel region coated with transparent material. The correlation between band to band tunneling and ...

IEEE2014

Electronic tuning effects via pi-linkers in tetrathiafulvalene-based dyes

Michael Graetzel, Chenyi Yi

Four new tetrathiafuIvalene (TTF)-based dyes featured with a donor-bridge-acceptor (D-pi-A) structure were synthesized and characterized. ALL of them undergo two reversible oxidations to form stable radical cation and dication species. The eIectronic inter ...

Royal Society of Chemistry2014

Investigation of Tunnel Field-Effect Transistors as a Capacitor-less Memory Cell

Mihai Adrian Ionescu, Wladyslaw Grabinski, Antonios Bazigos, Arnab Biswas, Nilay Dagtekin

In this work we report experimental results on the use of Tunnel Field-Effect Transistors (TFET) as capacitorless Dynamic Random Access Memory (DRAM) cells, implemented as a double-gate (DG) Fully-Depleted Silicon-On-Insulator (FD-SOI) devices. The devices ...

American Institute of Physics2014

UV-Sensitive Low Dark-Count PureB Single-Photon Avalanche Diode

Edoardo Charbon, Mahdi Aminian, Lin Qi

A single-photon avalanche diode with high sensitivity in the ultraviolet (UV) wavelength range has been fabricated on Si using pure boron chemical vapor deposition to create both a nanometer-thin anode junction and a robust light entrance window. The devic ...

Ieee-Inst Electrical Electronics Engineers Inc2014

Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells

Christophe Ballif, Antoine Descoeudres, Stefaan De Wolf

Silicon heterojunction solar cells are crystalline silicon-based devices in which thin amorphous silicon layers deposited on the wafer surfaces serve as passivated, carrier-selective contacts. The success of this technology is attributable to the ability o ...

Elsevier Academic Press Inc2014

Novel Configurable Logic Block Architecture Exploiting Controllable-Polarity Transistors, invited paper

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Xifan Tang

Controllable-polarity transistors exhibit a device-level configurability. Indeed, they can be dynamically configured between n- type and p-type. Such property can be exploited in Field Programmable Gate Arrays (FPGAs) to replace traditional Look- ...

IEEE2014

Reverse Biasing and Breakdown Behavior of PureB Diodes

Edoardo Charbon, Mahdi Aminian, Lin Qi

In PureB technology, a layer of pure boron is deposited on Si using a commercial single-wafer Si/SiGe epitaxial CVD reactor, forming ideal nm-deep ultrashallow junctions with low saturation currents [1]. As another attractive feature, the PureB layer itsel ...

2013

Phase noise measurement of external cavity diode lasers and implications for optomechanical sideband cooling of GHz mechanical modes

Tobias Kippenberg, Albert Schliesser

Cavity-optomechanical cooling via radiation pressure dynamical backaction enables ground-state cooling of mechanical oscillators, provided the laser exhibits sufficiently low phase noise. In this paper, we investigate and measure the excess phase noise of ...

Institute of Physics (IoP) and Deutsche Physikalische Gesellschaft2013

Zipping dielectric elastomer actuators: characterization, design and modeling

Herbert Shea, Samuel Rosset, Luc Maffli

We report on miniature dielectric elastomer actuators (DEAs) operating in zipping mode with an analytical model that predicts their behavior. Electrostatic zipping is a well-known mechanism in silicon MEMS to obtain large deformations and forces at lower v ...

Iop Publishing Ltd2013

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Diode

Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing

Electronic tuning effects via pi-linkers in tetrathiafulvalene-based dyes

Investigation of Tunnel Field-Effect Transistors as a Capacitor-less Memory Cell

UV-Sensitive Low Dark-Count PureB Single-Photon Avalanche Diode

Monolithic 50x50 MEMS Silicon Photonic Switches with Microsecond Response Time

Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells

Novel Configurable Logic Block Architecture Exploiting Controllable-Polarity Transistors, invited paper

Reverse Biasing and Breakdown Behavior of PureB Diodes

Phase noise measurement of external cavity diode lasers and implications for optomechanical sideband cooling of GHz mechanical modes

Zipping dielectric elastomer actuators: characterization, design and modeling

Graph Chatbot

Chattez avec Graph Search

Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing

Monolithic 50x50 MEMS Silicon Photonic Switches with Microsecond Response Time

UV-Sensitive Low Dark-Count PureB Single-Photon Avalanche Diode

Reverse Biasing and Breakdown Behavior of PureB Diodes

Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells

Zipping dielectric elastomer actuators: characterization, design and modeling

Electronic tuning effects via pi-linkers in tetrathiafulvalene-based dyes

Investigation of Tunnel Field-Effect Transistors as a Capacitor-less Memory Cell

Novel Configurable Logic Block Architecture Exploiting Controllable-Polarity Transistors, invited paper

Phase noise measurement of external cavity diode lasers and implications for optomechanical sideband cooling of GHz mechanical modes