Triméthylgallium

Applied sciences
Électrotechnique
Photonique
Photonique

Publications associées (26)

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Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

Nicolas Grandjean, Jean-François Carlin, Pirouz Sohi, Yao Chen, Mauro Mosca

We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n(++)-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (

IOP PUBLISHING LTD2019

Fabrication and Study of Optical Properties of LEDs Based on GaN Micropyramids with a Ni/Au/Graphene Semi-Transparent Contact

Hua Zhang

The results of studies of technological conditions of formation of LEDs on the basis of an InGaN/GaN micropyramid in the core/shell geometry using a semi-transparent Ni/Au/graphene contact have been presented. The structures have been formed by the method ...

2018

Redox melts formed by copper (i)/(ii) complexes as charge transfer and charge storage materials

Michael Graetzel, Shaik Mohammed Zakeeruddin, Ulf Anders Hagfeldt, Yiming Cao, Marina Freitag, Marko Stojanovic

The present invention relates to a redox copper complex melt comprising a metalorganic complex of formula (I) [Cu (La) n ] (I), wherein n is an integer 2; and La is a bidentate ligand selected from a ligand according to any one of formulae (1) and (2): ...

2018

Spin waves with large decay length and few 100 nm wavelengths in thin yttrium iron garnet grown at the wafer scale

Dirk Grundler

Using conventional coplanar waveguides (CPWs), we excited spin waves with a wavelength λ down to 310 nm in a 200 nm thin yttrium iron garnet film grown by liquid phase epitaxy. Spin-wave transmission was detected between CPWs that we separated by up to 2 m ...

American Institute of Physics2017

Self-formation of hexagonal nanotemplates for growth of pyramidal quantum dots by metalorganic vapor phase epitaxy on patterned substrates

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Romain Carron, Pascal Gallo, Alessandro Surrente

We demonstrate the self-formation of hexagonal nanotemplates on GaAs (111)B substrates patterned with arrays of inverted tetrahedral pyramids during metal-organic vapor phase epitaxy and its role in producing high-symmetry, site-controlled quantum dots (QD ...

Tsinghua Univ Press2016

Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Gwénolé Jean Jacopin, Gediminas Liaugaudas

We report a systematic study of the photoluminescence (PL) properties of a series of nearly lattice-matched (LM) GaN/(Al,In)N single quantum well (SQW) samples, with well thickness ranging from 1.5 to 5 nm, grown by metalorganic vapor phase epitaxy. Temper ...

Amer Inst Physics2016

Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions

Marco Malinverni

Over the last two decades III-nitride optoelectronic devices have experienced an impressive evolution in terms of performance. However, their potential is far from being fully exploited. Although they offer bandgaps from the deep UV to the infrared spectra ...

EPFL2015

Dilute-Nitride Low-Dimensional Nanostructures Formed on Non-Planar Substrates

Romain Carron

The properties of semiconductors heterostructures of nanoscopic dimensions change from that of bulk material according to the rules of quantum mechanics. The planar quantum wells (QWs) are widely used in various diode and laser devices thanks to the relati ...

EPFL2013

Comparison of vacancy and antisite defects in GaAs and InGaAs through hybrid functionals

Alfredo Pasquarello, Hannu-Pekka Komsa

The formation energies and charge transition levels of vacancy and antisite defects in GaAs and In0.5Ga0.5As are calculated through hybrid density functionals. In As-rich conditions, the As antisite is the most stable defect in both GaAs and InGaAs, except ...

2012

Implementation of spatio-time-resolved cathodoluminescence spectroscopy for studying local carrier dynamics in a low dislocation density m-plane InGaN epilayer grown on a freestanding GaN substrate

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Pierre Michel Corfdir, Munehito Kagaya

Spatio-time-resolvedcathodoluminescence (STRCL) spectroscopy isimplemented to assess the local carrier dynamics in a 70 nm-thick, very low threading dislocation (TD) density, pseudomorphic m-plane In GaN epilayer grown on a freestanding GaN substrate by me ...

2011

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