Publications associées à Température corporelle humaine

Mihai Adrian Ionescu, Didier Bouvet, Luca De Michielis, Livio Lattanzio, Giovanni Antonio Salvatore, Katherine Boucart

We present the fabrication and the electrical characterization of ferroelectric tunnel FETs (Fe-TFETs). This novel family of hysteretic switches combines the low subthreshold power of band-to-band tunneling devices with the retention characteristics of Fe ...

2010

Ferroelectric Polymer Gate Transistor as a Model System for Exploring the Mechanisms of the Retention Loss

Mihai Adrian Ionescu, Nava Setter, Alexander Tagantsev, Igor Stolichnov, Didier Bouvet, Giovanni Antonio Salvatore, Sebastian Riester, Roman Gysel

An attractive combination of properties of the ferroelectric copolymer of vinylidene fluoride and trifluoroethylene (P(VDF-TrFE)), including a relatively high spontaneous polarization and low dielectric constant as well as low processing temperature makes ...

Taylor & Francis2010

1.3-mu m InGaAlAs/InP-AlGaAs/GaAs Wafer-Fused VCSELs with 10-Gb/s modulation speed up to 100 degrees C

Elyahou Kapon, Grigore Suruceanu, Alexandru Mereuta, Vladimir Iakovlev, Alexei Sirbu, Andrei Caliman

10-Gb/s modulation speed up to 100 degrees C temperature is achieved with wafer-fused VCSELs incorporating re-grown tunnel junction and emitting more than 1-mW single mode power at the 1300-nm waveband in the full temperature range. (C) 2009 Optical Societ ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Surface Modification of Diamonds in Diamond/Al-matrix Composites

Ludger Weber, Reza Tavangar Hamzehkolaei

Fe- or Mn-powders were mixed with the diamonds and the mixtures were heat treated under different gas atmospheres like hydrogen or argon gas and at varying temperatures in order to roughen the surface of the diamond particles. Subsequently the reaction lay ...

Trans Tech Publications2009

Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

Nicolas Grandjean, Jean-François Carlin

The Ni/Al2O3/InAlN/AlN/GaN metal-oxide-semiconductor heterostructure (MOS-H) is investigated using capacitance-voltage and capacitance-time characteristics in the temperature range of 25-300 degrees C. An anomalous positive voltage shift of the capacitance ...

2009

Phase diagram of a polariton laser from cryogenic to room temperature

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Jacques Levrat, Gabriel Christmann

The signature of the strong-coupling regime is unambiguously evidenced in a GaN-based microcavity (MC) above the polariton lasing threshold P-thr at room temperature through the observation of the upper polariton branch. The MC system exhibits a renormaliz ...

2009

Albedo effect on radiative errors in air temperature measurements

Michael Lehning, Marc Parlange, Chad Higgins, Marc-Olivier Boldi

Most standard air temperature measurements are subject to significant errors mainly due to sensor heating by solar radiation, even when the measurement principle is accurate and precise. We present various air temperature measurements together with other m ...

American Geophysical Union2009

Mechanical spectroscopy of 18-carat AuCuPd white gold alloys

Daniele Mari, Robert Schaller, Iva Tkalcec Vâju, John Hennig

The mechanical loss and dynamic modulus temperature spectra of two 18-carat white gold alloys, Au58%Cu24%Pd18% without (grade A) and with alloying additions (grade B), were measured in the 400-1000 K temperature range. A peak interpreted as a Zener relaxat ...

2009

Temperature Monitoring During Tissue Freezing Using Ultrasound Speed Measurements

Martin Vetterli, Ali Hormati, Ivana Jovanovic

A major limitation of thermal therapies is the lack of detailed thermal information needed to monitor the therapy. Temperatures are routinely measured invasively with thermocouples, but only sparse measurements can be made. Ultrasound tomography is an attr ...

2009

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Température corporelle humaine

The Hysteretic Ferroelectric Tunnel FET

Ferroelectric Polymer Gate Transistor as a Model System for Exploring the Mechanisms of the Retention Loss

1.3-mu m InGaAlAs/InP-AlGaAs/GaAs Wafer-Fused VCSELs with 10-Gb/s modulation speed up to 100 degrees C

Surface Modification of Diamonds in Diamond/Al-matrix Composites

Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

Phase diagram of a polariton laser from cryogenic to room temperature

Albedo effect on radiative errors in air temperature measurements

Mechanical spectroscopy of 18-carat AuCuPd white gold alloys

Temperature Monitoring During Tissue Freezing Using Ultrasound Speed Measurements

Etude des propriétés morphologiques et catalytiques d'agrégats d'or triés en taille et déposés sur le TiO2(110)

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Chattez avec Graph Search

Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

Ferroelectric Polymer Gate Transistor as a Model System for Exploring the Mechanisms of the Retention Loss

Phase diagram of a polariton laser from cryogenic to room temperature

Albedo effect on radiative errors in air temperature measurements

1.3-mu m InGaAlAs/InP-AlGaAs/GaAs Wafer-Fused VCSELs with 10-Gb/s modulation speed up to 100 degrees C

Temperature Monitoring During Tissue Freezing Using Ultrasound Speed Measurements

Surface Modification of Diamonds in Diamond/Al-matrix Composites

Mechanical spectroscopy of 18-carat AuCuPd white gold alloys

Etude des propriétés morphologiques et catalytiques d'agrégats d'or triés en taille et déposés sur le TiO2(110)

The Hysteretic Ferroelectric Tunnel FET