Concept

Power semiconductor device

Publications associées (388)

Semiconductor device

Semiconductor device comprising a source electrode, a drain electrode and a semiconducting layer consisting of a single or double 2-dimensional layer(s) made from one of the following materials: MoS2, MoSe2, WS2, WSe2, MoTe2 or WTe2. ...

2012

Power and Area Efficient MOSFET-C Filter for Very Low Frequency Applications

Seyed Armin Tajalli, Yusuf Leblebici

New circuit design techniques for implementing very high-valued resistors are presented, significantly improving power and area efficiency of analog front-end signal processing in ultra-low power (ULP) biomedical systems. Ranging in value from few hundreds ...

Springer Verlag2012

Scaling submillimeter single-cycle transients toward megavolts per centimeter field strength via optical rectification in the organic crystal OH1

Christoph Peter Hauri

We present the generation of high-power single-cycle terahertz (THz) pulses in the organic salt crystal 2-[3-(4-hydroxystyryl)-5.5-dimethylcyclohex-2-enylidene]malononitrile or OH1. Broadband THz radiation with a central frequency of 1.5 THz (lambda(c) = 2 ...

2012

Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

Helmuth Berger

We realized ambipolar field-effect transistors by coupling exfoliated thin flakes of tungsten disulfide (WS2) with an ionic liquid dielectric. The devices show ideal electrical characteristics, including very steep subthreshold slopes for both electrons an ...

Amer Chemical Soc2012

Wide-Range Dynamic Power Management in Low-Voltage Low-Power Subthreshold SCL

Seyed Armin Tajalli, Yusuf Leblebici

Power-frequency scaling in subthreshold source coupled logic (STSCL) systems has been studied and analyzed. It is shown that the operating frequency of such systems can be adjusted over about three decades with linearly proportional power dissipation. The ...

Ieee-Inst Electrical Electronics Engineers Inc2012

Layout and Architecture Issues in Hall based CMOS microsystems

Pierre-André Farine, Pavel Kejik

The Hall cells intended for industrial applications are mainly produced in silicon integrated circuit technology. Recently, the increased use of other technologies, such as GaAs, InAs and InSb, have been reported. However, a single chip solution comprising ...

Czech Technical University in Prague, Faculty of Electrical Engineering2012

The electron–hole bilayer tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

We propose a novel tunnel field-effect transistor (TFET) concept called the electron–hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron–hole bilayer in order to achieve improved switching and higher driv ...

Elsevier2012

X-Band reflectarray antenna with switching-beam using PIN diodes and gathered elements

An electronically switching-beam reflectarray antenna to be used in X-band has been designed, manufactured and tested, using PIN diodes as switching device. The antenna has 244 elements arranged in a circular aperture. With the aim of saving electronic dev ...

Institute of Electrical and Electronics Engineers2012

Power electronic transformer (PET) converter: Design of a 1.2MW demonstrator for traction applications

Drazen Dujic, Akos Mester, Toufann Chaudhuri

A power electronic transformer converter made of cascaded multiple cells with a medium frequency link can replace the bulky traditional transformer in various applications with several advantages, including reduced size and weight, and energy savings. This ...

IEEE2012

New Tunnel-FET Architecture with Enhanced Ion and Improved Miller Effect for Energy Efficient Switching

Mihai Adrian Ionescu, Luca De Michielis, Cem Alper, Arnab Biswas

Tunneling Field Effect Transistors (TFET) are promising devices to respond to the demanding requirements of future technology nodes. The benefits of the TFETs are linked to their sub-60mV/decade sub-threshold swing, a prerequisite for scaling the supply vo ...

2012

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