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The transient and static behavior of an insulated gate bipolar transistor (IGBT) are analyzed through finite elements simulations and physically based equations. The standard model using a bipolar transistor driven by a MOSFET is abandoned for three partia ...
This paper presents a family of three transformerless converters (buck, boost and buck-boost) with two specific characteristics: the quadratic static gain as a function of the duty cycle ratio, and the division of the higher voltage level between the two s ...
The Ward-Dutton (WD) partitioning scheme [IEEE Trans. Electron Devices, vol. ED-27, p. 1571, Aug. 1980] is used extensively to develop transient and high-frequency advanced compact models for MOSFET devices. Recently, it has been shown that WD partitioning ...
Wireless sensors are small devices that are able to gather, process and deliver information from a physical environment to an external system. By doing so, they open new applications in different domains, such as healthcare, traffc control, defense and agr ...
In this paper we present Matlab analysis as well as CMOS implementation of an analog current mode Kohonen neural network (KNN). The presented KNN has been realized using several building blocks proposed earlier by the authors, such as: binary tree winner t ...
Scaling of semiconductor devices has pushed CMOS devices close to fundamental limits. The remarkable success story of Moore's law during the last 40 years, predicting the evolution of electronic device performances related to miniaturization, has always be ...
The self-switching principle is a synthesis of synchronous type switching and switch inner protection mechanisms. Both switch ON and switch OFF are performed on the base of current and voltage measurement across the switch. Applied to an active bidirection ...
The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric rando ...
The invention relates to methods for manufacturing semiconductor devices. Processes are disclosed for implementing suspended single crystal silicon nano wires (NWs) using a combination of anisotropic and isotropic etches and spacer creation for sidewall pr ...
Several works suggest the imminent appearance of bidirectional active devices. The promised performances go in the direction of a reverse recovery effects reduction and efficiency improvement. Our purpose is the study of an active management for switches t ...