Publications associées à MESFET

Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Elizabeth Buitrago Godinez, Matthieu Berthomé

Silicon nanowire (SiNW) field effect transistors (FETs) have been widely investigated as biological sensors for their remarkable sensitivity due to their large surface to volume ratio (S/V) and high selectivity towards a myriad of analytes through function ...

Elsevier2013

Multiterminal Memristive Nanowire Devices for Logic and Memory Applications: A Review

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici

Memristive devices have the potential for a complete renewal of the electron devices landscape, including memory, logic, and sensing applications. This is especially true when considering that the memristive functionality is not limited to two-terminal dev ...

Ieee-Inst Electrical Electronics Engineers Inc2012

Ambipolar Gate-Controllable SiNW FETs for Configurable Logic Circuits With Improved Expressive Capability

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici

In this letter, we report on the fabrication and characterization of ambipolar silicon-nanowire (SiNW) field-effect transistors (FETs) with a double-independent-gate (DIG) structure for polarity control. Several structures are fabricated, showing the effec ...

Institute of Electrical and Electronics Engineers2012

Self-Aligned Lateral Dual-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect Transistors

Mihai Adrian Ionescu, Ji Cao

Self-aligned lateral dual-gate suspended-body single-walled carbon nanotube (CNT) field-effect transistors (CNFETs) have been demonstrated. A nano-precision assembly method using resist-assisted ac-dielectrophoresis is applied. Superior I-V characteristics ...

American Institute of Physics2012

Vertically-stacked gate-all-around polysilicon nanowire FETs with sub-μm gates patterned by nanostencil lithography

Giovanni De Micheli, Jürgen Brugger, Andreea Veronica Savu, Davide Sacchetto, Michail Zervas, Shenqi Xie, Yusuf Leblebici

We report on the top-down fabrication of vertically-stacked polysilicon nanowire (NW) gate-all-around (GAA) field-effect-transistors (FET) by means of Inductively Coupled Plasma (ICP) etching and nanostencil lithography. The nanostencil is used to form sub ...

Elsevier2012

The electron–hole bilayer tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

We propose a novel tunnel field-effect transistor (TFET) concept called the electron–hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron–hole bilayer in order to achieve improved switching and higher driv ...

Elsevier2012

Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric

Klaus Kern, Hagen Klauk, Ralf Thomas Weitz, Frederik Sebastian Ante

A novel approach for the fabrication of transistors and circuits based on individual single-crystalline ZnO nanowires synthesized by a low-temperature hydrothermal method is reported. The gate dielectric of these transistors is a self-assembled monolayer t ...

2011

Floating-potential self-assembly of singe-walled carbon nanotube field effect transistors by ac-dielectrophoresis

Mihai Adrian Ionescu, Ji Cao, Anupama Arun

An improved method for self-assembly fabrication of single-walled carbon nanotube (SWCNT) field effect transistors (FETs) is presented, combining the unique design of biased/floating potential electrode geometry and the technique of aligning CNTs by pre-de ...

2011

The effects of channel length and film microstructure on the performance of pentacene transistors

Jürgen Brugger, Andreea Veronica Savu, Libero Zuppiroli, Katrin Sidler Arnet, Franziska Dora Fleischli

With the use of the stencil lithography, we fabricated pentacene thin-ﬁlm transistors pre- pared directly on thermally oxidized silicon gates with channel lengths ranging from 2 to 600 lm. By performing 4-probe measurements or by using the transfer line me ...

Elsevier2011

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

MESFET

Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor

Multiterminal Memristive Nanowire Devices for Logic and Memory Applications: A Review

Ambipolar Gate-Controllable SiNW FETs for Configurable Logic Circuits With Improved Expressive Capability

Self-Aligned Lateral Dual-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect Transistors

Vertically-stacked gate-all-around polysilicon nanowire FETs with sub-μm gates patterned by nanostencil lithography

The electron–hole bilayer tunnel FET

Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric

Floating-potential self-assembly of singe-walled carbon nanotube field effect transistors by ac-dielectrophoresis

The effects of channel length and film microstructure on the performance of pentacene transistors

Self-Assembled Liquid-Gated Zinc Oxide Nanowire Transistors

Graph Chatbot

Chattez avec Graph Search

Self-Aligned Lateral Dual-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect Transistors

Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric

The electron–hole bilayer tunnel FET

Ambipolar Gate-Controllable SiNW FETs for Configurable Logic Circuits With Improved Expressive Capability

Floating-potential self-assembly of singe-walled carbon nanotube field effect transistors by ac-dielectrophoresis

Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor

Multiterminal Memristive Nanowire Devices for Logic and Memory Applications: A Review

Vertically-stacked gate-all-around polysilicon nanowire FETs with sub-μm gates patterned by nanostencil lithography

Self-Assembled Liquid-Gated Zinc Oxide Nanowire Transistors

The effects of channel length and film microstructure on the performance of pentacene transistors