Concept

MESFET

Publications associées (120)

Carbon-Based Field-Effect Transistors for Nanoelectronics

In this review, the suitability of the major types of carbon nanostructures as conducting channels of field-effect transistors (FETs) is compared on the basis of the dimensionality and size of their pi-conjugated system. For each of these materials, recent ...

2009

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

Nicolas Grandjean, Jean-François Carlin, Marcus Gonschorek

We present GaN-based high electron mobility transistors (HEMTs) with a 2-nm-thin InAlN/AlN barrier capped with highly doped n(++) GaN. Selective etching of the cap layer results in a well-controllable ultrathin barrier enhancement-mode device with a thresh ...

2009

Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py, Marcus Gonschorek, Dobri Simeonov

Crack-free lattice-matched Al0.85In0.15N/GaN heterostructures were grown on sapphire substrates with barrier thicknesses up to 100 nm which exhibit very high polarization-induced electron sheet density (>2.5 x 10(13) cm(-2)) located at the heterointerface. ...

2009

Temperature mapping of Al0.85In0.15/AlN/Gan high electron mobility transistors through micro-photoluminescence studies

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py, Marcus Gonschorek, Dobri Simeonov

EDP Sciences2009

InAIN/GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases

Nicolas Grandjean, Jean-François Carlin

Al2O3 thin films were deposited by a metal organic chemical vapour deposition on InAIN/GaN heterostructures using Ar or NH3 as a carrier gas. Effects of NH3 and Ar carrier gases on the electrical and structural properties of Al2O3/InAIN/GaN HEMT devices we ...

2009

Sensing Mechanisms for Carbon Nanotube Based NH3 Gas Detection

Nicola Marzari

There has been an argument on carbon nanotube (CNT) based gas detectors with a field-effect transistor (FET) geometry: do the response signals result from charge transfer between adsorbed gas molecules and the CNT channel and/or from the gas species induce ...

2009

Physical aspects of colossal dielectric constant material CaCu3Ti4O12 thin films

Paul Muralt

The underlying physical mechanism of the so-called colossal dielectric constant phenomenon in CaCu3Ti4O12 CCTO thin films were investigated by using semiconductor theories and methods. The semiconductivity of CCTO thin films originated from the acceptor de ...

2009

Nature of doped a-Si:H / c-Si interface recombination

Stefaan De Wolf

Doped hydrogenated amorphous silicon a-Si:H films of only a few nanometer thin find application in a-Si:H/crystalline silicon heterojunction solar cells. Although such films may yield a field effect at the interface, their electronic passivation properties ...

2009

Horizontal HALL devices: A lumped-circuit model for EDA simulators

Radivoje Popovic, Predrag Drljaca

A completely scalable lumped-circuit model for horizontal HALL devices is presented therein that can be efficiently implemented in SPICE-like EDA simulators. The model has been employed for the quantitative analysis of: (a) geometrical, (b) temperature, an ...

2008

On performance of series connected CMOS vertical hall devices

Radivoje Popovic, Mirjana Banjevic

Series connected (stacked) CMOS vertical Hall devices were analyzed on the basis of performance of a single five contacts device biased at different common mode voltages with respect to the substrate. The uneven influence of junction field effect on residu ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008

Graph Chatbot

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Connectez-vous pour utiliser Chat avec Graph Search