Concept

MESFET

Publications associées (120)

Effect of anodic oxidation on the characteristics of lattice-matched AlInN/GaN heterostructures

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

The effect of anodic oxidation on the electronic characteristics of lattice-matched AlInN/GaN heterostructures was investigated using field-effect transistor (FET) structures with the gate areas in direct contact with the electrolytes. The gate surface of ...

2008

Carbon nanotube transistors - chemical functionalization and device characterization

Klaus Kern, Marko Burghard, Kannan Balasubramanian, Ralf Thomas Weitz, Eduardo Jian Hua Lee

This review presents an overview of the recent progress made in the field of carbon nanotube (CNT)-based field-effect transistors (FETs). Starting from the simplest device architectures, various methods reported for fabricating CNT-FETs are presented. The ...

2008

Gate modulation in carbon nanotube field effect transistors-based NH3 gas sensors

Nicola Marzari

Single-walled carbon nanotube field effect transistors (CNTFETs) are used as NH3 gas sensors and their sensing performances are studied in terms of gate biasing effect. By applying a positive gate bias, a high sensitivity of 178.5% per ppm, is achieved. Th ...

2008

Electrical properties of functionalized nanowire field effect transistors

Ralf Thomas Weitz

The utilization of functional organic materials holds great promise for applications in electronic devices. Semiconducting organic molecules are frequently used as channel material in field effect transistors, due to the ease by which they can be assembled ...

EPFL2008

Semiconductor based high resistance

Yusuf Leblebici

The field of invention is in the area of MOS integrated circuits operating with very low currents in the weak inversion region or sub threshold. The method aims at providing linear resistor with a value in the multi-mega ohm range. In order to produce Sili ...

2008

A new definition of threshold voltage in Tunnel FETs

Mihai Adrian Ionescu, Katherine Boucart

This work reports on the physical definition and extraction of threshold voltage in Tunnel FETs (field effect transistors) based on numerical simulation data. It is shown that the Tunnel FET has the outstanding property of having two threshold voltages: on ...

2008

Quantum well ZnCdTe/CdTe structures with integrated ferroelectric gates

Nava Setter, Igor Stolichnov, Enrico Colla

Combination of ferroelectric layers and semiconductor heterostructures with 2D electron gas may lead to a number of new applications from high-mobility field effect transistors with ferroelectric gates to quantum dots patterned with polarization domains at ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007

Ferroelectric Gate on AlGaN/GaN Heterostructures

Nava Setter, Paul Muralt, Igor Stolichnov, Lisa Malin

A PZT, Pb(Zr,Ti)O-3 (40:60), ferroelectric layer has been successfully deposited onto a Al0.3Ga0.7N/GaN heterostructure with a 2DEG, two dimensional electron gas. Due to the chemical and temperature stability of AlGaN/GaN it was possible to implement the c ...

IEEE2007

Charge transport mechanisms in organic and microcrystalline silicon field-effect transistors

Libero Zuppiroli, Marie-Noëlle Bussac, Steven Konezny

Several organic and inorganic materials have emerged as promising candidates for the active layer of field-effect transistors (FETs) fabricated on flexible substrates. The charge transport models necessary for device optimization in these systems are at di ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2007

Charge transport mechanisms in organic and microcrystalline silicon field-effect transistors

Libero Zuppiroli, Marie-Noëlle Bussac, Steven Konezny

International Society for Optical Engineering, Bellingham WA, WA 98227-0010, United States2007

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