Farzan JazaeriFarzan Jazaeri received his M.Sc. degree in 2009 from University of Tehran and his Ph.D. in electronic engineering from EPFL in 2015. He has been serving as Research Scientist at EPFL since 2015 and Senior RD Semiconductor Device Engineer in the Swatch Company since 2019.He is a recipient of the 2018 Electron Devices Society George E. Smith Award, the best talk award from MIXDES 2019 and the best paper awards from ESSDERC2018 and ESSDERC2019, and several other academic awards. He is also awarded an advanced Swiss National Science Foundation grant for two years fellowship in MIT and NASA. His doctoral thesis was recognized to be eligible for the IBM award in 2017. Dr. Jazaeri is currently research scientist and project leader in high level of international scientific collaborative activities at EPFL. His research activities on solid-state physics are focused on creation of the cryogenic temperature infrastructure necessary to operate the qubits for quantum computations(MOSQUITO), radiation-induced damages in advanced devices for the future high energy physics experiments at CERN (GigaRadMOST), Pinned Photodiodes for CIS, and modeling and characterization AlGaN-GaN heterostructure in collaboration with IMEC. Together with Dr. Sallese, he is the lead developer of EPFL HEMT MODEL for GaN HEMTs. He fully developed a new model (EPFL-JL Model) for the so-called nanowire FETs and was invited by Cambridge University Press to write a book on junctionless nanowire FETs, emerging nanoelectronic devices, already published since 2018. He serves as lead editor and reviewer for several scientific journals. He has been an invited keynote speaker at several international conferences and events. He is invited to MIXDES 2019 as a keynote speaker to address quantum bits and quantum computing architecture.From Jun 2009 to February 2010, he worked on designing and implementing SD/HD broadcast systems with SAMIM-RAYANEH Co., Tehran, Iran. Between March 2010 and November 2011 he worked as a SCADA expert in Tehran Regional Electric Co. (TREC), Tehran, Iran. From September 2010 to December 2011, he continued his research activities in nano-electronics in Tehran, Iran. In December 2011, he joined to Electron Device Modelling and Technology Lab (EDLab) and pursued his Ph.D. degree at EPFL. In 2015, he received his Ph.D. from Microsystems and Microelectronics department, Integrated Systems Laboratory (STI/IC) at EPFL, Lausanne, Switzerland.
Alfredo PasquarelloAlfredo Pasquarello effectue ses études en physique à l'Ecole normale supérieure de Pise et à l'Université de Pise et obtient leurs diplômes respectifs en 1986. Il obtient le titre de Docteur ès sciences à l'EPFL en 1991 avec une thèse portant sur les transitions à plusieurs photons dans les solides. Ensuite, il effectue des recherches post-doctorales aux Laboratoires Bell (Murray Hill, New Jersey) sur les propriétés magnétiques des fullerènes de carbone. En 1993, il rejoint l'Institut romand de recherche numérique en physique des matériaux (IRRMA), où sa recherche porte sur des méthodes de simulation ab initio. En 1998, le Prix Latsis de l'EPFL lui est decerné pour son travail de recherche portant sur les matériaux à base de silice désordonnée. Bénéficiant de plusieurs subsides du Fonds National, il constitue ensuite sa propre équipe de recherche à l'IRRMA. En juillet 2003, il est nommé Professeur en Physique théorique de la matière condensée à l'EPFL. Actuellement, il dirige la Chaire de simulation à l'échelle atomique.
Luca NelaLuca Nela received his B.S. degree in Physical Engineering from Politecnico di Torino, Turin, Italy, in 2015. He then participated in a double degree program between Politecnico di Torino and Université Paris Diderot, Paris, France, from which he received his M.S. in Nanotechnologies for the ICTs and Quantum Devices in 2017. Finally, he joined the Power and Wide-Band-Gap Electronics Research Laboratory in EPFL, Lausanne, Switzerland, where he is currently pursuing a doctoral degree. His research interests include the design and characterization of power semiconductor devices.
