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In this paper, a micromachined silicon straight tube is tested as a fluid density sensor. In comparison with other density measurement techniques, the use of micromachined tubes require small sample volumes and allows continuous monitoring of the fluid den ...
In order to better understand the relationship between lead speciation and its bioavailability in natural waters, the interactions between Pb(II), fulvic acid and the freshwater alga, Chlorella kesslerii were studied at different algal cell densities. An i ...
We investigate the structure and mobility of single self-interstitial atom and vacancy defects in body-centered-cubic transition metals forming groups 5B (vanadium, niobium, and tantalum) and 6B (chromium, molybdenum, and tungsten) of the Periodic Table. D ...
Compared to the AlGaN alloy, which can only be grown under tensile strain on GaN, the AlInN alloy is predicted by Vegard's law to be lattice-matched (LM) on fully relaxed GaN templates for an indium content of similar to 17.5%, i.e., it can be grown either ...
In this paper, a new and simple silicon straight tube is tested as a fluid density sensor. The tube structure has a hexagonal cross section. The fabrication process consists of anisotropic silicon etching and silicon fusion bonding. A tube structure with a ...
Using a density functional scheme, the authors investigate the electronic properties of an epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface, as recently realized experimentally. Simulated scanning-tunneling-microscopy images of filled and empty ...
We present novel adaptive sampling algorithms for particle-based fluid simulation. We introduce a sampling condition based on geometric local feature size that allows focusing computational resources in geometrically complex regions, while reducing the num ...
We investigate the use of growth interruption to obtain low-density InAs quantum dots (QDs) on GaAs. The process was realized by Ostwald-type ripening of a thin InAs layer. It was found that the optical properties of the QDs as a function of growth interru ...
The growth of ruthenium (Ru) nanocrystals on the SiO2 and Al2O3 films has been investigated using atomic layer deposition (ALD) method, indicating that much higher density Ru nanocrystals are grown on the Al2O3 film compared with the SiO2 film. Ru nanocrys ...
Germanium metal-insulator-semiconductor capacitors with La2O3 dielectrics deposited at high temperature or subjected to post deposition annealing show good electrical characteristics, especially low density of interface states D-it in the 10(11) eV(-1) cm( ...
