Concept

Oxydation thermique

Publications associées (152)

Charge state of the O-2 molecule during silicon oxidation through hybrid functional calculations

Alfredo Pasquarello, Peter Broqvist, Audrius Alkauskas

We study the charge state of the diffusing O-2 molecule during silicon oxidation through hybrid functional calculations. We calculate charge-transition levels of O-2 in bulk SiO2 and use theoretical band offsets to align these levels with respect to the Si ...

2008

Tunable, high aspect ratio pillars on diverse substrates using copolymer micelle lithography: an interesting platform for applications

Jürgen Brugger, Cyrille Hibert, Sivashankar Krishnamoorthy

We demonstrate the use of copolymer micelle lithography using polystyrene-block-poly(2-vinylpyridine) reverse micelle thin films in their as-coated form to create nanopillars with tunable dimensions and spacing, on different substrates such as silicon, sil ...

2008

Impact of lateral non-uniform doping and hot carrier degradation on capacitance behavior of high voltage MOSFETs

Mihai Adrian Ionescu, Michel Declercq, Yogesh Singh Chauhan

In this work, a detailed analysis of capacitance behavior of high voltage MOSFET (HV-MOS) e.g. LDMOS, VDMOS using device simulation is made. The impact of lateral non-uniform doping and drift region is separately analyzed. It is shown that the peaks in C-G ...

Ieee Service Center2008

Effects of edge defects induced by multi-wire sawing on the wafer strength

Christophe Ballif, Mathijs Pieter van der Meer, Adrien Bidiville, Fanny Alexia Jeanneret

The focus of the photovoltaic industry is a continuous reduction of the cost of solar energy. Lowering the wafer thickness during the processing by means of multi-wire slurry saw technology is one of the key issue to reduce these costs. However, reducing t ...

2008

Bended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott, Dimitrios Tsamados, Luca De Michielis

In this paper we investigate the mobility enhancement due to strain in bended NW MOSFETs. Stress of 200MPa to 2GPa, induced by thermal oxidation, is measured in suspended NW FETs by Raman spectroscopy. Mobility enhancement of more than 100% is observed. Pe ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007

Compact modeling of high voltage MOSFETs

Yogesh Singh Chauhan

In the automotive industry, there is a strong trend that has increased the electronics in cars for various functions like fuel injection, electric control of doors and windows, electric chair adjustment, air conditioning etc. The 12V battery used in the pr ...

EPFL2007

Proton-induced fixed positive charge at the Si(100)-SiO2 interface

Alfredo Pasquarello

Positively charged defects induced by protons at the Si(100)-SiO2 interface are studied through density-functional calculations and realistic interface models. Protons generally preserve the bonding network, but cause the spontaneous breaking of strained b ...

2007

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Gabriel Christmann, Julien Dorsaz, Antonino Francesco Castiglia, Sylvain Nicolay, Marcel Py, Marcus Gonschorek, Mauro Mosca, Dobri Simeonov

We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the g ...

2007

Trapping, self-trapping and the polaron family

Henrik Moodysson Rønnow

The earliest ideas of the polaron recognized that the coupling of an electron to ionic vibrations would affect its apparent mass and could effectively immobilize the carrier (self-trapping). We discuss how these basic ideas have been generalized to recogni ...

IOP PUBLISHING LTD2007

Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds

Christophe Ballif

The performance of many silicon devices is limited by electronic recombination losses at the crystalline silicon (c-Si) surface. A proper surface passivation scheme is needed to allow minimizing these losses. The surface passivation properties of amorphous ...

2007

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