Générateur thermoélectrique

Résumé

Un générateur thermoélectrique (GTE ou ) est une plaque comportant des semi-conducteurs et utilisant l'effet Seebeck pour produire de l'électricité en tirant parti de la différence de températures entre chaque face. Ce type de module est également utilisé pour le refroidissement thermoélectrique. On appelle l'effet utilisé, l'« effet Peltier–Seebeck », car il dérive des travaux du physicien français Jean-Charles Peltier et du physicien allemand Thomas Johann Seebeck. Le composant utilise généralement des circuits en cuivre et la partie semi-conductrice en tellurure de bismuth. Cette source d'électricité peut constituer un système d'alimentation autonome ou s'intégrer dans un réseau en tant que générateur intermittent, d'appoint ou de charge continue. Histoire En 1821, Thomas Johann Seebeck a redécouvert qu'un gradient thermique formé entre deux conducteurs dissemblables peut produire de l'électricité. Au cœur de l'effet thermoélectrique se trouve le fait qu'un gradient

Source officielle

https://fr.wikipedia.org/wiki/G%C3%A9n%C3%A9rateur_thermo%C3%A9lectrique

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Chargement

Transistors organiques ultraminces à base de pentacène

Adrian von Mühlenen

The goal of this thesis is to contribute to the understanding of charge transport in organic field-effect transistors (OFETs) made of pentacene. Organic thin-film transistors (OTFTs) with active layers thicknesses of 5, 10, 20, and 100 nm were fabricated in order to examine their structure and electrical characteristics and identify the key parameters that affect the charge transport in these devices. The conductivity of the pentacene films determined via four probe measurements suggests the presence of extrinsic charge carriers, or residual carriers, which have a large influence on device performance and electrical characteristics. The origin of these carriers is discussed in terms of a charge-transfer process occurring between the organic semiconductor and the electron acceptor states of the gate oxide surface. The gate interface is studied by varying the density of residual carriers via modification of the oxide surface by different plasma treatments with or without using subsequent deposition of various molecular monolayers. The OFETs yielded residual carrier densities ranging from 5 × 109 et 1 × 1013 cm-2 depending on the gate interface modification. The electrical characteristics such as the film conductivity and field-effect mobility are shown to be dependent on the density of residual carriers. Based on the measured density of residual carriers the OFETs are classified into two groups : devices based on doped and on un-doped pentacene. Temperature-dependent measurements of the field-effect mobility and the film conductivity performed on these devices reveal a thermally-activated character. This suggests that charge transport in the examined devices occurs via hopping between localized states. Based on the activation energies of the film conductivity and the field-effect mobility, the difference in energy between the Fermi and the transport level Δε is estimated to be between 10 and 160 meV depending on the density of residual carriers. This range of values is in agreement with thermoelectric power measurements performed on the same devices. The thermoelectric power is discussed in terms of two contributions : one that is dependent on Δε and another constant term that is independent of temperature and gate interface modification. The latter contribution was measured to be 265 ± 40 μV/K and originates from the creation of the phonon cloud associated with local changes in intermolecular interaction. This suggests that the charge carrier in the channel is dressed with a cloud of polarization, an electronic polaron.

EPFL2007

Chargement

Heavily cold-drawing was performed on a pearlitic steel wire and on an ultra-low carbon (ULC) steel wire in order to highlight and quantify the microstructural changes caused by this type of deformation. Both global techniques (thermoelectric power, electrical resistivity, internal fiction background) and local techniques (Atom Probe Tomography) were combined for this study. It was shown that two distinct stages have to be taken into account during the cold-drawing of pearlitic steels. The first stage (below a true strain of 1.5) was attributed mainly to the lamellar alignment, while the second stage (above a true strain of 1.5) was unambiguously interpreted as being due to a gradual enrichment of the carbon content of ferrite arising from the strain induced cementite decomposition. The carbon content in solid solution in ferrite was assessed as a function of the true strain. All the techniques showed that this carbon content exceeds the solubility limit of carbon in the ferrite above a true strain of 2.2. A correlation between the increase in the carbon content of ferrite and the increase in yield strength was also highlighted. Moreover, a scenario was proposed to explain the microstructural changes caused by drawing. (C) 2015 Elsevier B.V. All rights reserved.

Elsevier Science Sa2015

Chargement

Identification of the mechanisms responsible for static strain ageing in heavily drawn pearlitic steel wires

Aude Marie Agnès Lamontagne, Daniele Mari

The microstructural changes occurring during drawing and ageing in pearlitic steel wires have been studied using the thermoelectric power (TEP) measurements combined with atom probe tomography (APT) and differential scanning calorimetry (DSC). APT analysis confirmed that cementite dissolution occurs during the cold-drawing process. The high sensitivity of TEP to solute atoms allowed two ageing mechanisms to be identified, both related to a redistribution of carbon atoms. The complementary use of tensile tests and DSC confirmed these results.

Taylor & Francis Ltd2014

Chargement

Transistors organiques ultraminces à base de pentacène

Adrian von Mühlenen

EPFL2007