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We present a technique for contactless angular position sensing that allows low power consumption while keeping dynamic properties comparable to existing sensors. The technique essentially consists in combining a recently developed sensing element, the so- ...
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The rotational spectrum of cyanic acid, HOCN, has been detected in the centimeter-wave band in a molecular beam by Fourier transform microwave spectroscopy and in the millimeter-wave band by conventional spectroscopy in a low-pressure laboratory discharge. ...
This paper presents an initial state of the art about the estimation of the sound power emitted by electrical machines. The paper proposes a new method, more accurate, to evaluate the sound power emitted by a PM machine by a 3D FEM mechanical analysis. It ...
We perform broadband spin-wave spectroscopy on thin submicrometer-wide Ni80Fe20 magnetic wires. Intentionally, we apply the in-plane magnetic field under an angle that is a few degrees off with respect to the in-plane hard-axis direction. In an intermediat ...
The polarization properties of stimulated Brillouin scattering (SBS) amplification or attenuation in standard single-mode fibers are examined through vectorial analysis, simulation and experiment. Vector propagation equations for the signal wave, incorpora ...
The aim of the ITER electron cyclotron heating and current drive upper launcher (UL) is to control magnetohydrodynamic activity in the plasma, in particular neoclassical tearing modes, requiring a narrow and peaked deposition of the radio-frequency (rf) po ...
Light or electromagnetic wave scattered by a single sphere or a coated sphere has been considered as a classic Mie theory. There have been some further extensions that were made further based on the Mie theory. Recently, a closed-form analytical model of t ...
Lead chalcogenide (IV-VI narrow-gap semiconductor) layers on Si or BaF2(111) substrates are employed to realize two mid-infrared optoelectronic devices for the first time. A tunable resonant cavity enhanced detector is realized by employing a movable mirro ...
Grown on a (111) high-resistivity silicon substrate, 0.1-mu m gate AlInN/GaN high-electron mobility transistors (HEMTs) achieve a maximum current density of 1.3 A/mm, an extrinsic transconductance of 330 mS/mm, and a peak current gain cutoff frequency as h ...
The physics of supra thermal test ions in turbulent plasmas can be conveniently studied in basic plasma physics devices, which allow high-resolution measurements of plasma and fast ion parameters and wave fields throughout the whole plasma cross-section. W ...