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The aim of this research project is to study the deposition of thermal atoms and small ionised clusters on well defined surfaces. For this, an installation has been developed at the Institut de Physique Expérimentale to produce mass selected ionic metal cl ...
Low dose (10(-4) - 10(-2) dpa) irradiation of high-purity (99.99%) copper single crystals were performed in the PIREX facility with 600 MeV protons at room temperature. The irradiation hardening effects are investigated by measuring the yield stress or cri ...
Molecular dynamics computer simulations on three intermetallic compounds, Cu,Au, Ni,AI and NiAl, have been performed to investigate the kinetics of the disordering and amorphization processes. These systems were chosen because reliable embedded atom potent ...
The microchemical composition and the electronic structure of the two superconductors HgBa2Ca2Cu3O8+delta(Hg-1223) and HgBa2CaCu2O6+delta (Hg-1212) were analyzed with the technique of photoemission with high spatial resolution. This enabled primary spectra ...
The mechanism of silicon diffusion in GaAs, Al0.3Ga0.7As, and the silicon diffusion-induced layer disordering of multiquantum wells have been studied by photoluminescence, secondary-ion-mass spectroscopy, and transmission electron microscopy across a corne ...
It is the purpose of this report to summarize the state of knowledge regarding the hydration of C//3A and C//4AF in the presence of calcium sulfate at ordinary temperatures. These interstitial phases in combination with calcium sulfate may comprise up to 2 ...
The observation of a wedge-shaped semiconductor specimen by transmission electron microscopy (WTEM) is an interesting alternative to conventional TEM. Information on chemical composition, layer thickness down to atomic resolution, spatial extension of the ...
We report results on electric DC-field induced and self induced recovery of the switched remanent polarisation (P-r(s)) in fatigued ferroelectric thin films. The field induced recovery is characterised by a strong asymmetry and depends on the ratio between ...
Laser induced defects in (Al,Ga)As heterostructures have been investigated. Luminescence topography reveals three different defects, a luminescent B, a nonradiative D as well as dark line defects (DLD). Luminescence and excitation spectra together with TEM ...
After Zn diffusion into Si-doped GaAs (n almost-equal-to 1.5 X 10(18) cm-3), the Zn-diffused samples are annealed under different conditions: (i) in vacuum, (ii) in arsenic vapor, and (iii) with a Si3N4 mask capping the sample surface. The Zn concentration ...