Publications de Christian Enz | EPFL Graph Search

Self-heating Effects in RF Region of FDSOI MOSFETs at Cryogenic Temperatures

Edoardo Charbon, Christian Enz, Hung-Chi Han

Radio-frequency (RF) circuits are crucial to qubit manipulation, for which transistor self-heating effects may influence performance and possibly change the quantum state. This paper presents an analytical RF model of FDSOI MOSFETs considering dynamic self ...

Institute of Electrical and Electronics Engineers (IEEE)2025

Cryogenic sEKV Compact Model Applied to 22 NM FDSOI Enabling Low-Temperature Circuit Simulation

Edoardo Charbon, Christian Enz, Hung-Chi Han

IEEE2025

Cryogenic Circuit Performance Prediction Using Design-Oriented Model (SEKV) On 22nm FDSOI

Edoardo Charbon, Christian Enz, Hung-Chi Han

IEEE2025

Modeling of the MOSFET for the Design of Cryo-CMOS Circuits

Edoardo Charbon, Christian Enz, Hung-Chi Han

This paper highlights some of the challenges faced in the modeling of MOSFET devices operating at cryogenic temperature (CT). It will review the most important phenomena, including the saturation of the subthreshold swing (S S) below a critical temperature ...

IEEE Computer Society2024

Analytical Modeling of Short-Channel MOSFET Differential Pair Non-Linearity

Christian Enz, Andreas Peter Burg, Catherine Dehollain, Hung-Chi Han

Energy efficiency is of utmost importance in modern applications. Power consumption optimisation could be improved by a comprehensive analytical modeling of the characteristics of critical blocks in a system. Dynamic range (DR) has a strong effect on the p ...

2024

A Comprehensive Output Conductance Model Valid in All Regions of Inversion

Christian Enz, Hung-Chi Han

The output conductance and transconductance are key small-signal parameters that typically set the dc gain of amplifiers. Although the transconductance can be modelled simply and accurately, modeling the output conductance over a large range of bias and ge ...

IEEE2024

Analytical Modeling of Cryogenic Subthreshold Currents in 22-nm FDSOI Technology

Edoardo Charbon, Christian Enz, Hung-Chi Han

The transistor compact model is crucial but has yet to mature for cryogenic electronics. This paper presents a sophisticated analytical model of the MOSFET subthreshold current at cryogenic temperatures, accounting for the thermionic, hopping, source-to-dr ...

Institute of Electrical and Electronics Engineers2024

An Ultralow Power Short-Range 60-GHz FMCW Radar in 22-nm FDSOI CMOS

Christian Enz, Francesco Chicco

This article presents the design of an ultralow power short-range 57-66 GHz frequency-modulated continuous-wave (FMCW) radar. The transmitter (TX) path includes a BPSK modulator in order to implement a low-IF architecture and it is optimized for short-rang ...

Institute of Electrical and Electronics Engineers2024

Optical Urea Sensing in Sweat for Kidney Healthcare by Sensitive and Selective Non-enhanced Raman Spectroscopy

Christian Enz, Sandro Carrara, Assim Boukhayma, Ata Jedari Golparvar, Mattia Petrelli

Sweat biomarker analysis has attracted much interest in applications ranging from sports to wearable healthcare. Among all the sweat biomolecules, abnormal urea levels have been linked to several complications, particularly renal dysfunction. Here, we repo ...

SPIE-INT SOC OPTICAL ENGINEERING2023

Design of Low-power Analog Circuits in Advanced Technology Nodes using the Gm/ID Approach

Christian Enz, Hung-Chi Han

The Gm/ID approach has proven to be an efficient technique for the design of low-power analog circuits. Until now it was mostly demonstrated on older CMOS technology nodes. In this paper we will show that the Gm/ID methodology still holds for advanced tech ...

IEEE2023