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This paper presents a SOI Hall sensor based microsystem for energy measurement. The mixed-mode signal circuitry has been entirely designed and integrated in the experimental 0.5 mu m fully depleted SOI 3 V technology. It consists of an integrated Hall elem ...
This paper presents a hybrid continuous-discrete-time Delta-Sigma modulator for portable communication systems following a low-power strategy. The proposed design methodology is extendable to different specifications. A multi-bit technique has been introdu ...
In this paper a floating body partially depleted SOI MOSFET used to measure light intensity using the transient charge pumping [1] is modeled through an equivalent electrical circuit. Essentially, photogenerated charges of the MOSFET are converted into a c ...
The growing demand for the solid-state meters for power and energy measurement leads to the fully integrated Hall-sensor-based microsystem solutions. In this paper, a silicon-on-insulator (SOI) Hall-sensor-based. microsystem for energy measurements with dy ...
This paper presents a methodology of a basic analog blocks retargeting from bulk to fully depleted (FD) SOI technology. The design methodology is generally not related to the model used for the circuit simulations. However, the proposed one is closely link ...
To perform a current sensing in capacitorless 1-transistor (IT) DRAMs on SOI, we have developed a sensing scheme with automatic reference generation. The reference current is generated by an adjustable current source. The electrical calibration of the refe ...
In many applications, a Hall element is used for contact-less measurement such as linear and angular positions, electrical current, power and energy, etc. The Hall element fabricated by means of CMOS technology features mediocre characteristics [R.S. Popov ...
This paper presents the application of a complete digital calibration methodology to the improvement of a Hall sensor-based current measurement microsystem. It is a step-by-step illustration of how generic calibration techniques and circuits can be used on ...
There are many inventions described and illustrated herein. In a first aspect, the present invention is a technique and circuitry for reading data that is stored in memory cells. In one embodiment of this aspect, the present invention is a technique and ci ...
An implementation of a dynamic supply RF power amplifier (PA) in 0.11 mu m CMOS technology occupying a total area of 1.35mm(2) is presented. Two-tone measurement results at 2.4 and 5.2GHz show that the system can deliver over 16dBm linear output power with ...