François Krummenacher

Cette personne n’est plus à l’EPFL

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Publications associées (55)

A circuit-level substrate current model for smart-power ICs

Maher Kayal, Jean-Michel Sallese, François Krummenacher, Marc Pastre, Fabrizio Lo Conte

This paper presents a new modeling methodology accounting for generation and propagation of minority carriers that can be used directly in circuit-level simulators in order to estimate coupled parasitic currents. The model is based on a new compact model o ...

IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Global 2D modeling of minority and majority substrate coupled currents

Maher Kayal, Jean-Michel Sallese, François Krummenacher, Marc Pastre, Fabrizio Lo Conte

This paper presents a modeling strategy to simulate 2D propagation of electrical perturbations induced by direct biasing of substrate junctions. Identifying parasitic substrate devices such as bipolar transistors reaches rapidly its limit when multiple cur ...

2009

A fully integrated solar battery charger

Maher Kayal, François Krummenacher, Marc Pastre

This paper presents a solar charger ASIC for Nickelbased (NiCd or NiMH) batteries. The system is fully integrated and no external component is needed. The ASIC includes a voltage reference, a low-impedance switch, an oscillator, a poweron reset, and a digi ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects

Jean-Michel Sallese, François Krummenacher, Christophe Lallement

A physics-based compact model including short-channel effects (SCEs) is presented for undoped (or lightly doped) symmetric double-gate (DG) MOSFETs. Our approach allows an accurate description of the device behavior down to 60 nm with a simple set of equat ...

2008

Substrate current modeling for high-voltage smart power BCD technology

Maher Kayal, François Krummenacher, Marc Pastre, Fabrizio Lo Conte

This paper presents a compact- and a macro-model for estimating and simulating the perturbations induced in the substrate by high-voltage transistors switching inductive loads. On one hand, it allows the designer to predict the amount of switching noise ge ...

2008

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François Krummenacher

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A circuit-level substrate current model for smart-power ICs

Global 2D modeling of minority and majority substrate coupled currents

A fully integrated solar battery charger

Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects

Substrate current modeling for high-voltage smart power BCD technology

A Compact DC and AC Model for Circuit Simulation of High Voltage VDMOS Transistor

A Highly Scalable High Voltage MOSFET Model

Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects

Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs

A new charge-based Compact Model for Lateral Asymmetric MOSFET

Substrate current modeling for high-voltage smart power BCD technology

Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs

A new charge-based Compact Model for Lateral Asymmetric MOSFET

Global 2D modeling of minority and majority substrate coupled currents

A fully integrated solar battery charger

Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects

A Compact DC and AC Model for Circuit Simulation of High Voltage VDMOS Transistor

A Highly Scalable High Voltage MOSFET Model

Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects

A circuit-level substrate current model for smart-power ICs