Publications de Christophe Lallement

Analytic modelling of passive microfluidic mixers

Jean-Michel Sallese, Christophe Lallement

This paper deals with a new analytical model for microfluidic passive mixers. Two common approaches already exist for such a purpose. On the one hand, the resolution of the advection-diffusion-reaction equation (ADRE) is the first one and the closest to ph ...

AMER INST MATHEMATICAL SCIENCES-AIMS2022

Compact Model for Continuous Microfluidic Mixer

Jean-Michel Sallese, Christophe Lallement

While the development of lab-on-chip is increasing, the lack of dedicated computer-aided design tools appears as a bottleneck preventing the emergence of large-scale industrial applications. One of the answer relied on 50 years of CAD experience in microel ...

IEEE2020

FOSS EKV2.6 Verilog-A Compact MOSFET Model

Christian Enz, Jean-Michel Sallese, Wladyslaw Grabinski, Eric Vittoz, François Krummenacher, Matthias Bucher, Christophe Lallement

The EKV2.6 MOSFET compact model has had a considerable impact on the academic and industrial community of analog integrated circuit design, since its inception in 1996. The model is available as a free open-source software (FOSS) tool coded in Verilog-A. T ...

IEEE2019

Transadmittance Efficiency under NQS Operation in Asymmetric Double Gate FDSOI MOSFET

Jean-Michel Sallese, Christophe Lallement

The state-of-the-art RF and millimeterwave circuits design requires accurate prediction of the nonquasi-static (NQS) effects at high frequency for all levels of channel inversion. This paper provides a practical insight to help high-frequency performance a ...

2019

Analog RF and mm-Wave Design Tradeoff in UTBB FDSOI: Application to a 35 GHz LNA

Jean-Michel Sallese, Wladyslaw Grabinski, Christophe Lallement

The state-of-the art RF and millimeter-wave first-cut circuits design requires simple hand calculation methods to avoid time-consuming iterative simulations. The classical MOSFET sizing methods used in advanced technologies, still rely on questionable and ...

IEEE2018

Analog and RF Modeling of FDSOI UTBB MOSFET Using Leti-UTSOI Model

Jean-Michel Sallese, Christophe Lallement

Ultra-Thin Body and Box (UTBB) Fully-depleted Silicon-on-Insulator (FDSOI) MOSFETs exhibit very high transit frequency granting advantageous RF and low-power circuits design. This requires accurate models describing transistor behavior in all operating reg ...

IEEE2016

A Common Core Model for Junctionless Nanowires and Symmetric Double Gate FETs

Jean-Michel Sallese, Farzan Jazaeri, Lucian Barbut, Christophe Lallement

In this brief, we evidence the link between planar and cylindrical junctionless FETs from the electrostatics point of view. In particular, we show that an approximate solution of the Poisson-Boltzmann equation for junctionless nanowires can be mapped on th ...

Institute of Electrical and Electronics Engineers2013

Generalization of the Concept of Equivalent Thickness and Capacitance to Multigate MOSFETs Modeling

Jean-Michel Sallese, Christophe Lallement

In this letter, we propose to introduce the notion of equivalent capacitance and to generalize the so-called equivalent-thickness concept to model arbitrary shapes of lightly doped nonplanar multigate MOSFETs, without the need to introduce any unphysical p ...

2012

Physics-based compact model for ultra-scaled FinFETs

Jean-Michel Sallese, Ashkhen Yesayan, Christophe Lallement

A physical and explicit compact model for lightly doped FinFETs is presented. This design-oriented model is valid for a large range of silicon Fin widths and lengths, using only a very few number of model parameters. The quantum mechanical effects (QMEs), ...

2011

Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors

Jean-Michel Sallese, Christophe Lallement

We derived an analytical model for the junctionless double-gate metal-oxide-semiconductor field-effect transistor (DG MOSFET) device, the principle of which has been recently demonstrated. Despite some similarities with classical junction-based DG MOSFETs, ...

2011