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Micro-system for active vibratory insulation, characterised in that it comprises a stand which includes a frame (1) and at least two beams (2a, 2b) which interlock and carry or are intended to carry an element requiring stabilisation (3), said beams (2a, 2 ...
Pyroelectric sensor has each pixel's secondary electrode made with no contact with other secondary electrodes. The pyroelectric sensor consists of a series of pixels (12A) with primary (14) and secondary (28) electrodes on opposite surfaces of a thin porou ...
The origin of a recently reported peculiar phenomenon-polarization reversal against the applied electric field in ferroelectric thin films [M. Aplanalp and P. Gunter, Ferroelectrics 258, 3 (2001), T. Morita and Y. Cho, Appl. Phys. Lett. 84, 257 (2004)]-has ...
The method for group manufacturing of pyroelectric sensors by forming a thin pyroelectric layer on the upper side of a silicon wafer, where each sensor comprises several pixels (4) and each pixel is defined by an upper electrode (6) situated on the face si ...
The concept of a field-effect transistor with ferroelectric gate has been implemented using the GaN/AlGaN heterostructure combined with Pb(Zr,Ti)O-3 ferroelectric layer. The processing conditions were optimized in a way to obtain textured Pb(Zr,Ti)O-3 film ...
Piezoelectric micromachined ultrasonic transducers comprising a 10 mu m thick Si device layer and a 14 pro thick piezoelectric PZT layer were investigated. The PZT films were deposited by a sol-gel technique. The transverse piezoelectric coefficient was me ...
The mass sensitivity of an AlN thin film resonators operated in air at 6-8 GHz has been investigated in theory and experiment. The 30 x 30 mu m wide resonators included a 180-300 nm thick, highly oriented AlN thin film, bottom and top electrode, and an aco ...
Frequency shift, design, and fabrication issues have been investigated for the realization of 8 GHz handpass filters based on AlN thin film bulk acoustic wave resonators. Fabrication includes well-textured AlN thin films on Pt (111) electrodes and SiO2/AlN ...
This paper describes fabrication and characterization results of piezoelectric micromachined ultrasonic transducers (pMUTs) based on 2-mu m-thick Pb(Zr0.53Ti0.47O3) (PZT) thin films. The applied structures are circular plates held at four bridges, thus par ...
We investigated he effect of film orientation on piezoelectric and ferroelectric properties of (Bi(3.25)Ln(0.75))Ti3O12 (Ln=La, Nd, and Sm). c-axis-oriented films were grown on (111)Pt electrodes with nondoped Bi4Ti3O12 buffer layers. The films grown on (1 ...
