Julien Dorsaz

Publications associées (24)

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Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages

Nicolas Grandjean, Jean-François Carlin, Julien Dorsaz, Eric Feltin, Antonino Francesco Castiglia, Mauro Mosca

Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene ...

2008

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Julien Dorsaz, Eric Feltin, Antonino Francesco Castiglia, Gatien Cosendey

A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guid ...

2008

Selective oxidation and selective etching of allnn layers for manufacturing group iii nitride semiconductor devices

Jean-François Carlin, Julien Dorsaz

A method for including an oxide region in a layered structure being grown epitaxially on a substrate, comprising the steps of epitaxially forming a Group III-nitride precursor layer, and selectively oxidizing the precursor layer, thereby forming the oxide ...

2007

Efficient current injection scheme for nitride vertical cavity surface emitting lasers

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Julien Dorsaz, Eric Feltin, Antonino Francesco Castiglia, Dobri Simeonov

The authors report the realization of InGaN/GaN light emitting diodes (LEDs) with an electrical injection design suitable for vertical cavity surface emitting lasers. Controlled oxidation of an AlInN interlayer lattice matched to GaN allows confining the i ...

2007

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Julien Dorsaz, Eric Feltin, Gabriel Christmann, Antonino Francesco Castiglia, Sylvain Nicolay, Marcel Py, Marcus Gonschorek

We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the g ...

2007

Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Julien Dorsaz, Eric Feltin, Gabriel Christmann, Antonino Francesco Castiglia

Laser action with low threshold average pump power density (similar to 50 W. cm(-2)) at room temperature is reported for a crack-free planar vertical cavity surface emitting laser (VCSEL) structure based on a bottom lattice-matched AllnN/GaN distributed Br ...

2007

Lattice-matched AlInN alloys for nitride-based optoelectronic devices

Julien Dorsaz

Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...

EPFL2006

Crack-free highly reflective AlInN/AlGaN bragg mirrors for UV applications

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Raphaël Butté, Julien Dorsaz, Eric Feltin, Gabriel Christmann

We report the growth of highly reflective distributed Bragg reflectors (DBRs) in the UV region using the Al0.85In0.15N/Al0.2Ga0.8N lattice-matched system. The DBRs were deposited on nearly strain-free Al0.2Ga0.8N templates to avoid strain-induced structura ...

2006

Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Julien Dorsaz, Eric Feltin, Gabriel Christmann, Sylvain Nicolay

We propose to use lattice-matched AlInN/GaN to replace the Al(Ga)N/GaN material system for III-nitride Bragg reflectors, despite the poor material quality of AlInN reported until very recently. We report an improvement of AlInN material that allowed for su ...

2005

Progress in AlInN-GaN Bragg reflectors: Application to a microcavity light emitting diode

Jean-François Carlin, Marc Ilegems, Julien Dorsaz

We report on the progress in the growth of highly reflective AlInN-GaN distributed Bragg reflectors deposited by metalorganic vapor phase epitaxy. Al1-xInxN layers with an In content around x similar to 0.17 are lattice-matched to GaN, thus avoiding strain ...

2005

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