Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

We propose to use lattice-matched AlInN/GaN to replace the Al(Ga)N/GaN material system for III-nitride Bragg reflectors, despite the poor material quality of AlInN reported until very recently. We report an improvement of AlInN material that allowed for successful fabrication of a microcavity light emitting diode, a distributed Bragg reflector with 99.4% reflectivity and microcavities with a quality factor over 800. These results establish state-of-the-art values for III-nitrides, and announce the future importance of AlInN in GaN-based optoelectronics. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

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III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

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III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Photothermal spectroscopy on-chip sensor for the measurement of a PMMA film using a silicon nitride micro-ring resonator and an external cavity quantum cascade laser