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The development of highly efficient lightweight flexible perovskite solar cells (PSCs) opens the way to high-throughput roll-to-roll manufacturing processes and new applications such as building integration and mobile products. Flexible PSCs are generally ...
Flexible perovskite solar cells (PSCs) hold great promise for the low-cost roll-to-roll production of lightweight single- and multijunction photovoltaic devices. Among the different deposition methods used for the perovskite absorber, the two-step hybrid v ...
NATURE PUBLISHING GROUP2018
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We demonstrate the self-formation of hexagonal nanotemplates on GaAs (111)B substrates patterned with arrays of inverted tetrahedral pyramids during metal-organic vapor phase epitaxy and its role in producing high-symmetry, site-controlled quantum dots (QD ...
The properties of semiconductors heterostructures of nanoscopic dimensions change from that of bulk material according to the rules of quantum mechanics. The planar quantum wells (QWs) are widely used in various diode and laser devices thanks to the relati ...
EPFL2013
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The properties of single site-controlled InGaAsN quantum wires (QWRs)-both untreated and irradiated with atomic hydrogen-are probed by micro-magnetophotoluminescence spectroscopy. The strong anisotropy of the diamagnetic shift measured for different orient ...
2012
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We investigated the effects of hydrogen irradiation on the degree of linear polarization, rho, of the light emitted by site-controlled, dilute-nitride InGaAsN V-groove quantum wires (QWRs). While in the as-grown sample the polarization of the QWR emission ...
American Institute of Physics2012
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Site-controlled InGaAsN quantum wires (QWRs) emitting at 1.3 lm at room temperature were grown on V-grooved GaAs substrates by modulated-flux metallorganic vapor phase epitaxy. The nonplanar substrate template is shown to enhance the nitrogen uptake, evide ...
We investigated the composition and optical properties of GaInAsN/GaAs single quantum wells (QWs) grown on vicinal-(001) GaAs substrates using metallorganic vapor phase epitaxy with modulated nitrogen-precursor flux. A significant enhancement in N incorpor ...
GaInAsN quantum dots (QDs) were grown in inverted pyramids on a patterned (111) B GaAs surface. Incorporation of N in the active structure is attested to by a significant (similar to 80 meV) redshift of the photoluminescence spectrum of the QDs. Influence ...