Davide Sacchetto

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Publications associées (52)

Vertically Stacked Double Gate Nanowires FETs with Controllable Polarity: From Devices to Regular ASICs

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Michele De Marchi, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Shashi Kanth Bobba

Vertically stacked nanowire FETs (NWFETs) with gate-all-around structure are the natural and most advanced extension of FinFETs. At advanced technology nodes, many devices exhibit ambipolar behavior, i.e., the device shows n- and p-type characteristics sim ...

2013

Multi-Terminal Am-Bipolar Memristive Devices for Emerging Logic and Memory Architectures

Davide Sacchetto

EPFL2013

A ReRAM-Based Non-Volatile Flip-Flop with Sub-VT Read and CMOS Voltage-Compatible Write

Giovanni De Micheli, Andreas Peter Burg, Davide Sacchetto, Pierre-Emmanuel Julien Marc Gaillardon, Pascal Andreas Meinerzhagen

The total power budget of Ultra-Low Power (ULP) VLSI Systems-on-Chip (SoCs) is often dominated by the leakage power of embedded memories and pipeline registers, which typically cannot be power-gated during sleep periods as they need to retain data and prog ...

2013

Design and Architectural Assessment of 3-D Resistive Memory Technologies in FPGAs

Giovanni De Micheli, Davide Sacchetto, Mohamed Haykel Ben Jamaa, Pierre-Emmanuel Julien Marc Gaillardon

Emerging Non-Volatile Memories (eNVMs) such as Phase-Change RAMs (PCRAMs) or Oxide-based Resistive RAMs (OxRRAMs) are promising candidates to replace Flash and Static Random Access Memories in many applications. This paper introduces a novel set of buildin ...

Institute of Electrical and Electronics Engineers2013

GMS: Generic Memristive Structure for Non-Volatile FPGAs

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Shashi Kanth Bobba

The invention of the memristor enables new possibilities for computation and non-volatile memory storage. In this paper we propose a Generic Memristive Structure (GMS) for 3-D FPGA applications. The GMS cell is demonstrated to be utilized for steering logi ...

2012

Ambipolar Gate-Controllable SiNW FETs for Configurable Logic Circuits With Improved Expressive Capability

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici

In this letter, we report on the fabrication and characterization of ambipolar silicon-nanowire (SiNW) field-effect transistors (FETs) with a double-independent-gate (DIG) structure for polarity control. Several structures are fabricated, showing the effec ...

Institute of Electrical and Electronics Engineers2012

Resistive Programmable Through Silicon Vias for Reconfigurable 3D Fabrics

Giovanni De Micheli, Davide Sacchetto, Michail Zervas, Yusuf Leblebici, Yüksel Temiz

In this letter we report on the fabrication and characterization of titanium dioxide (TiO2)-based resistive RAM (ReRAM) co-integration with 380 ìm-height Cu Through Silicon Via (TSV) arrays for programmable 3D interconnects. Nonvolatile resistive switching ...

Institute of Electrical and Electronics Engineers2012

Memristive-Biosensors: A New Detection Method by Using Nanofabricated Memristors

Giovanni De Micheli, Sandro Carrara, Davide Sacchetto, Yusuf Leblebici, Camilla Baj-Rossi

This paper proposes a new detection methodology based on memristive-effect registered on silicon nanowire. The nano-wires are fabricated by a lithographic technique that allows precise and selective etching at the nanoscale. The wires are obtained in three ...

Elsevier2012

Process/Design Co-optimization of Regular Logic Tiles for Double-Gate Silicon Nanowire Transistors

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang, Shashi Kanth Bobba, Michele De Marchi

Ambipolar transistors with on-line configurability to n-type and p-type polarity are desirable for future integrated circuits. Regular logic tiles have been recognized as an efficient layout fabric for ambipolar devices. In this work, we present a process/ ...

2012

Multiterminal Memristive Nanowire Devices for Logic and Memory Applications: A Review

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici

Memristive devices have the potential for a complete renewal of the electron devices landscape, including memory, logic, and sensing applications. This is especially true when considering that the memristive functionality is not limited to two-terminal dev ...

Ieee-Inst Electrical Electronics Engineers Inc2012

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