Martin Heiss

Cette personne n’est plus à l’EPFL

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Publications associées (35)

Magnetic states of an individual Ni nanotube probed by anisotropic magnetoresistance

Anna Fontcuberta i Morral, Dirk Grundler, Daniel Rüffer, Martin Heiss, Eleonora Russo

Defined magnetization states in magnetic nanotubes could be the basic building blocks for future memory elements. To date, it has been extremely challenging to measure the magnetic states at the single-nanotube level. We investigate the magnetization state ...

Royal Soc Chemistry2012

Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

Anna Fontcuberta i Morral, Martin Heiss, Emanuele Uccelli, Eleonora Russo, Lionel Michelet

Multiple seed formation by three-dimensional twinning at the initial stages of growth explains the manifold of orientations found when self-catalyzed GaAs nanowires grow on silicon. This mechanism can be tuned as a function of the growth conditions by chan ...

2012

Vertical "III-V" V-Shaped Nanomembranes Epitaxially Grown on a Patterned Si[001] Substrate and Their Enhanced Light Scattering

Anna Fontcuberta i Morral, Martin Heiss, Eleonora Russo, Sonia Conesa Boj, Anna Dalmau Mallorquí, Ludovit Pavel Zweifel

We report on a new form of III-IV compound semiconductor nanostructures growing epitaxially as vertical V-shaped nanomembranes on Si(001) and study their light-scattering properties. Precise position control of the InAs nanostructures in regular arrays is ...

American Chemical Society2012

Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis

Anna Fontcuberta i Morral, Martin Heiss, Bo Peng

Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semicon ...

American Chemical Society2012

Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates

Anna Fontcuberta i Morral, François Morier-Genoud, Martin Heiss, Emanuele Uccelli, Eleonora Russo, Gabriel Mugny

In this paper we introduce a new paradigm for nanowire growth that explains the unwanted appearance of parasitic nonvertical nanowires. With a crystal structure polarization analysis of the initial stages of GaAs nanowire growth on Si substrates, we demons ...

American Chemical Society2011

Fundamental limits in the external quantum efficiency of single nanowire solar cells

Anna Fontcuberta i Morral, Martin Heiss

The fundamental limits for the measurement of the efficiency of single nanowire solar cell devices are presented. We evaluate the effect of the substrate, light polarization, and existence of Mie resonances in the absorption of the solar spectrum for nanow ...

American Institute of Physics2011

Determination of the band gap and the split-off band in wurtzite GaAs using Raman and photoluminescence excitation spectroscopy

Anna Fontcuberta i Morral, Martin Heiss, Bernt Ketterer

GaAs nanowires with 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant Raman spectroscopy and photoluminescence to determine the position of the crystal-fie ...

2011

In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires

Anna Fontcuberta i Morral, Martin Heiss, Emanuele Uccelli, Bernt Ketterer

Growth of GaAs and InxGa1-xAs nanowires by the group-III assisted molecular beam epitaxy growth method on (001)GaAs/SiO2 substrates is studied in dependence on growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth w ...

Institute of Physics2011

Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

Anna Fontcuberta i Morral, Martin Heiss, Sonia Conesa Boj, Emanuele Uccelli, Efthimios Kaxiras, Jun Ren

A method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminesc ...

2011

Untangling the Electronic Band Structure of Wurtzite GaAs Nanowires by Resonant Raman Spectroscopy

Anna Fontcuberta i Morral, Martin Heiss, Emanuele Uccelli, Bernt Ketterer

In semiconductor nanowires, the coexistence of wurtzite and zinc-blende phases enables the engineering of the electronic structure within a single material. This presupposes an exact knowledge of the band structure in the wurtzite phase. We demonstrate tha ...

American Chemical Society2011

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