Publications de Sara Rigante | EPFL Graph Search

Method to fabricate finfet sensors, in particular, finfet sensors for ionic, chemical and biological applications on si-bulk

The present invention relates to a method of producing a FinFET sensor device comprising the steps of: providing a silicon substrate; etching the silicon substrate to produce at least one upwardly extending Fin structure externally protruding from a surfac ...

2015

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon

Mihai Adrian Ionescu, Didier Bouvet, Antonios Bazigos, Sara Rigante, Elizabeth Buitrago Godinez, Paolo Scarbolo

Field-effect transistors (FETs) form an established technology for sensing applications. However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technolo ...

Amer Chemical Soc2015

Technological development of high-k dielectric FinFETs for liquid environment

Mihai Adrian Ionescu, Didier Bouvet, Sara Rigante

This work presents the technological development and characterization of n-channel fully depleted high-k dielectric FinFETs (Fin Field Effect Transistor) for applications in a liquid environment. Herein, we provide a systematic approach based on Finite Ele ...

Pergamon-Elsevier Science Ltd2014

Finfet with fully PH-responsive HfO2 as highly stable biochemical sensor

Mihai Adrian Ionescu, Didier Bouvet, Sara Rigante

In this work, highly scaled FinFETs (Fin Field Effect Transistors) are proposed as both sensing and circuit units of a lab-on-a-chip platform. The FinFET-based sensors with an HfO2 gate oxide demonstrate full pH-response with ΔVth ≈ 56 mV/pH. High readout ...

IEEE2014

The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Sara Rigante, Elizabeth Buitrago Godinez

A 3D vertically stacked silicon nanowire (SiNW) and Fin field effect transistor (FET) featuring a high density array (7 or 8 x 20 SiNWs, > 4 Fins vertically stacked) of fully depleted, ultra-thin (SiNWs diameters similar to 15-30 nm, Fin width/height fw si ...

Elsevier2014

Investigation of the dominant 1/f noise source in silicon nanowire sensors

Sara Rigante, Jan Brunner, Christian David

We analyzed 1/f noise in silicon nanowire ion-sensitive field-effect transistors (SiNW-ISFETs) having different wire widths ranging from 100 nm to 1 pin and operated under different gating conditions in order to determine the noise source and the sensor ac ...

Elsevier2014

High-K Dielectric FinFETs on Si-Bulk for Ionic and Biological Sensing Integrated Circuits

Sara Rigante

EPFL2014

pH Response of Silicon Nanowire Sensors: Impact of Nanowire Width and Gate Oxide

Sara Rigante, Christian David

We present a systematic study of the performance of silicon nanowires (SiNWs) with different widths when they are used as ion-sensitive field-effect transistors (ISFETs) in pH-sensing experiments. The SiNW widths ranged from 100 nm to 1 mu m. The SiNW-ISFE ...

Myu, Scientific Publishing Division2013

High-k dielectric FinFETs towards Sensing Integrated Circuits

Mihai Adrian Ionescu, Didier Bouvet, Sara Rigante

This work presents a well-defined electronic device, namely a n-channel high-k dielectric FinFET (Fin Field Effect Transistor) as new label-free sensor for enhanced sensing integrated circuits. Metal gate FinFETs on bulk Si have been successfully electrica ...

IEEE2013

FinFET for high sensitivity ion and biological sensing applications

Mihai Adrian Ionescu, Livio Lattanzio, Sara Rigante

A double-gate (DG) fin field effect transistor (FinFET) is discussed as new label-free ion and biological sensor. Simulations as function of channel doping, geometrical dimensions, operation point and materials investigated the device response to an extern ...

2011