Publications de Sara Rigante | EPFL Graph Search

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon

Mihai Adrian Ionescu, Didier Bouvet, Antonios Bazigos, Elizabeth Buitrago Godinez, Sara Rigante, Paolo Scarbolo

Field-effect transistors (FETs) form an established technology for sensing applications. However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technolo ...

Amer Chemical Soc2015

Investigation of the dominant 1/f noise source in silicon nanowire sensors

Sara Rigante, Jan Brunner, Christian David

We analyzed 1/f noise in silicon nanowire ion-sensitive field-effect transistors (SiNW-ISFETs) having different wire widths ranging from 100 nm to 1 pin and operated under different gating conditions in order to determine the noise source and the sensor ac ...

Elsevier2014

Technological development of high-k dielectric FinFETs for liquid environment

Mihai Adrian Ionescu, Didier Bouvet, Sara Rigante

This work presents the technological development and characterization of n-channel fully depleted high-k dielectric FinFETs (Fin Field Effect Transistor) for applications in a liquid environment. Herein, we provide a systematic approach based on Finite Ele ...

Pergamon-Elsevier Science Ltd2014

Finfet with fully PH-responsive HFO2 as highly stable biochemical sensor

Mihai Adrian Ionescu, Didier Bouvet, Sara Rigante

In this work, highly scaled FinFETs (Fin Field Effect Transistors) are proposed as both sensing and circuit units of a lab-on-a-chip platform. The FinFET-based sensors with an HfO2 gate oxide demonstrate full pH-response with ΔVth ≈ 56 mV/pH. High readout ...

IEEE2014

Finfet With Fully Ph-Responsive Hfo2 As Highly Stable Biochemical Sensor

Mihai Adrian Ionescu, Didier Bouvet, Sara Rigante

IEEE2014

Single Crystal Silicon UHF Wine-Glass Ring Resonator with HfO2 Solid Dielectric Gap embedded in a Field Effect Transistor

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Emanuele Andrea Casu, Sara Rigante

In this work we present an ultra-high-frequency (UHF) single crystal silicon ring resonator with two embedded FETs. Electromechanical coupling is realized through a high-K, namely 10 nm HfO2, dielectric solid-gap sandwiched between the gate electrode and t ...

2014

The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Elizabeth Buitrago Godinez, Sara Rigante

A 3D vertically stacked silicon nanowire (SiNW) and Fin field effect transistor (FET) featuring a high density array (7 or 8 x 20 SiNWs, > 4 Fins vertically stacked) of fully depleted, ultra-thin (SiNWs diameters similar to 15-30 nm, Fin width/height fw si ...

Elsevier2014

pH Response of Silicon Nanowire Sensors: Impact of Nanowire Width and Gate Oxide

Sara Rigante, Christian David

We present a systematic study of the performance of silicon nanowires (SiNWs) with different widths when they are used as ion-sensitive field-effect transistors (ISFETs) in pH-sensing experiments. The SiNW widths ranged from 100 nm to 1 mu m. The SiNW-ISFE ...

Myu, Scientific Publishing Division2013

FinFET integrated low-power circuits for enhanced sensing applications

Mihai Adrian Ionescu, Antonios Bazigos, Alexandru Rusu, Sara Rigante, Paolo Livi

This work presents different circuit architectures that combine sensing and signal readout functions. The basic building block is a Fin Field-Effect Transistor (Fin-FET) used as both sensor and metal gate transistor. Moreover, a hybrid partially gated FinF ...

Elsevier2013

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Sara Rigante

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon

Method to fabricate finfet sensors, in particular, finfet sensors for ionic, chemical and biological applications on si-bulk

Investigation of the dominant 1/f noise source in silicon nanowire sensors

Technological development of high-k dielectric FinFETs for liquid environment

Finfet with fully PH-responsive HFO2 as highly stable biochemical sensor

Finfet With Fully Ph-Responsive Hfo2 As Highly Stable Biochemical Sensor

Single Crystal Silicon UHF Wine-Glass Ring Resonator with HfO2 Solid Dielectric Gap embedded in a Field Effect Transistor

The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs

pH Response of Silicon Nanowire Sensors: Impact of Nanowire Width and Gate Oxide

FinFET integrated low-power circuits for enhanced sensing applications

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FinFET integrated low-power circuits for enhanced sensing applications

The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs

pH Response of Silicon Nanowire Sensors: Impact of Nanowire Width and Gate Oxide

Finfet With Fully Ph-Responsive Hfo2 As Highly Stable Biochemical Sensor

Single Crystal Silicon UHF Wine-Glass Ring Resonator with HfO2 Solid Dielectric Gap embedded in a Field Effect Transistor

Finfet with fully PH-responsive HFO2 as highly stable biochemical sensor

Investigation of the dominant 1/f noise source in silicon nanowire sensors

Technological development of high-k dielectric FinFETs for liquid environment

Method to fabricate finfet sensors, in particular, finfet sensors for ionic, chemical and biological applications on si-bulk

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon