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Intrinsic hydrogenated amorphous silicon (a-Si:H) films can yield in outstanding electronic surface passivation of crystalline silicon (c-Si) wafers as utilized in the HIT (heterojunction with intrinsic thin layer) solar cells. We have studied the correlat ...
Doped hydrogenated amorphous silicon a-Si:H films of only a few nanometer thin find application in a-Si:H/crystalline silicon heterojunction solar cells. Although such films may yield a field effect at the interface, their electronic passivation properties ...
In this article, we report on the use of transmission electron microscopy (TEM) for the fabrication of high-performance textured amorphous/crystalline silicon (a-Si:H/c-Si) heterojunction (HJ) solar cells. Whereas classical thin-film characterization techn ...
The a-Si:H / c-Si heterostructure, is an attractive solution to avoid the presence of highly recombinative metal contacts at the surfaces of c-Si based solar cells. To assure good interface passivation, insertion of a sandwiched thin device-grade intrinsic ...
The electronic properties of hydrogenated amorphous silicon (a-Si:H) relax following stretched exponentials. This phenomenon was explained in the past by dispersive hydrogen diffusion, or by retrapping included hydrogen motion. In this letter, the authors ...
