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Maria-Anna Chalkiadaki

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Publications associées (10)

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The evolution and characteristics of the electronics is directly linked to the technological and societal progress. Today, there is a huge variety of electronic solutions offered, with the RF low-power systems, such as wireless sensor networks, wireless bo ...

EPFL2016

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This paper presents a fast and accurate way to design and optimize LC oscillators using the inversion coefficient (IC). This methodology consists of four steps: linear analysis, nonlinear analysis, phase noise analysis, and optimization using a figure of m ...

2015

RF Small-Signal and Noise Modeling Including Parameter Extraction of Nanoscale MOSFET From Weak to Strong Inversion

Christian Enz, Maria-Anna Chalkiadaki

The downscaling of CMOS processes has led to devices with an impressive RF performance. Advanced nanoscale RF MOSFETs present very high transit frequency, which can be traded off with lower power consumption, by shifting the operating point towards the wea ...

Ieee-Inst Electrical Electronics Engineers Inc2015

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The design of advanced integrated circuits (IC) in particular for low power analog and radio-frequency (RF) application becomes more complex as the device level modeling confronting challenges in micro- and nano-meter CMOS processes. As present CMOS techno ...

Ieee2015

BSIM6: Analog and RF Compact Model for Bulk MOSFET

Christian Enz, Yogesh Singh Chauhan, Maria-Anna Chalkiadaki, Sourabh Khandelwal

BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4. The model shows excellent source-drain symmetry during ...

Institute of Electrical and Electronics Engineers2014

Accurate RF modeling of nanoscale MOSFET using BSIM6 including low levels of inversion

Christian Enz, Maria-Anna Chalkiadaki

Nanoscale CMOS devices display very high peak transit frequency Ft of several hundreds of GHz. This feature can be exploited for reducing power consumption by shifting the operating point towards moderate or eventually weak inversion where the Ft still rea ...

Elsevier2014

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The recently proposed BSIM6 bulk MOSFET compact model is set to replace the hitherto widely used BSIM3 and BSIM4 models as the de-facto industrial standard. Unlike its predecessors which were threshold voltage based, the BSIM6 core is charge based and thus ...

Elsevier2013

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In this paper, we discuss the recent enhancements made in the BSIM6 bulk MOSFET model. BSIM6 is the latest compact model of bulk MOSFET from BSIM group which have body referenced charge based core. Junction capacitance model is improved over BSIM4 and is i ...

2013

Low-power RF modeling of a 40nm CMOS technology using BSIM6

Christian Enz, Maria-Anna Chalkiadaki

The state-of-the-art scaled down CMOS processes have led to devices with extremely high Ft reaching several hundreds of GHz. This high F t can be traded with power consumption by moving the operating point towards weak inversion with Ft reaching tens of GH ...

2013

Design Methodology for Ultra Low-Power Analog Circuits using Next Generation BSIM 6 Compact Model

Christian Enz, Anurag Mangla, Maria-Anna Chalkiadaki

The design of analog circuits strongly relies on the accuracy of the models available in the circuit simulators. The recently proposed BSIM6 bulk MOSFET compact model is set to replace the hitherto widely used BSIM3 and BSIM4 models as the de-facto industr ...

2012