Adam Shmuel Teman

Publications associées (30)

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Multi-Ported GC-eDRAM Bitcell with Dynamic Port Configuration and Refresh Mechanism

Adam Shmuel Teman, Robert Giterman

Embedded memories occupy an increasingly dominant part of the area and power budgets of modern systems-on-chips (SoCs). Multi-ported embedded memories, commonly used by media SoCs and graphical processing units, occupy even more area and consume higher pow ...

MDPI2024

Current-Based Data-Retention-Time Characterization of Gain-Cell Embedded DRAMs Across the Design and Variations Space

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman, Andrea Bonetti

The rise of data-intensive applications has resulted in an increasing demand for high-density and low-power on-chip embedded memories. Gain-cell embedded DRAM (GC-eDRAM) is a logic-compatible alternative to conventional static random access memory (SRAM) w ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Gain-Cell Embedded DRAMs: Modeling and Design Space

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman, Andrea Bonetti

Among the different types of DRAMs, gain-cell embedded DRAM (GC-eDRAM) is a compact, low-power and CMOS-compatible alternative to conventional SRAM. GC-eDRAM achieves high memory density as it relies on a storage cell that can be implemented with as few as ...

IEEE2020

A 1-Mbit Fully Logic-Compatible 3T Gain-Cell Embedded DRAM in 16-nm FinFET

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman

Gain-cell embedded DRAM (GC-eDRAM) is a logic-compatible embedded memory alternative to SRAM, offering higher density, lower leakage power consumption, and an inherent two-ported functionality. However, increased leakage currents and process variations und ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

GC-eDRAM with Body-Bias Compensated Readout and Error Detection in 28nm FD-SOI

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman, Andrea Bonetti

Gain-cell embedded DRAM (GC-eDRAM) is an attractive alternative to conventional SRAM due to its high-density, low-leakage, and inherent two-ported functionality. However, its dynamic storage mechanism requires power-hungry refresh cycles to maintain data. ...

IEEE2020

Gain-Cell Embedded DRAMs: Modeling and Design Space

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman, Andrea Bonetti

Among the different types of dynamic random-access memories (DRAMs), gain-cell embedded DRAM (GC-eDRAM) is a compact, low-power, and CMOS-compatible alternative to conventional static random-access memory (SRAM). GC-eDRAM achieves high memory density, as i ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

GC-eDRAM With Body-Bias Compensated Readout and Error Detection in 28-nm FD-SOI

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman, Andrea Bonetti

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Improving Energy-Efficiency in Dynamic Memories Through Retention Failure Detection

Adam Shmuel Teman, Robert Giterman

A gain-cell embedded DRAM (GC-eDRAM) is an attractive logic-compatible alternative to the conventional static random access memory (SRAM) for the implementation of embedded memories, as it offers higher density, lower leakage, and two-ported operation. How ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

A Timing-Monitoring Sequential for Forward and Backward Error-Detection in 28 nm FD-SOI

Andreas Peter Burg, Andrea Bonetti, Adam Shmuel Teman, Jeremy Hugues-Felix Constantin

The increasing impact of variability on near-threshold nanometer circuits calls for a tighter online monitoring and control of the available timing margins. Error-detection sequentials are widely used together with error-correction techniques to operate di ...

IEEE2018

A 4-Transistor nMOS-Only Logic-Compatible Gain-Cell Embedded DRAM With Over 1.6-ms Retention Time at 700 mV in 28-nm FD-SOI

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman

2018

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A 4-Transistor nMOS-Only Logic-Compatible Gain-Cell Embedded DRAM With Over 1.6-ms Retention Time at 700 mV in 28-nm FD-SOI

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman

2018

A 1-Mbit Fully Logic-Compatible 3T Gain-Cell Embedded DRAM in 16-nm FinFET

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

GC-eDRAM With Body-Bias Compensated Readout and Error Detection in 28-nm FD-SOI

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman, Andrea Bonetti

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019