Heidi Andrea Potts

Cette personne n’est plus à l’EPFL

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (28)

Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality

Anna Fontcuberta i Morral, Lucas Güniat, Mahdi Zamani, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Jean-Baptiste Leran, Wonjong Kim, Luca Francaviglia, Vladimir Dubrovskii

2018

Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires

Anna Fontcuberta i Morral, Lucas Güniat, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Wonjong Kim, Jean-Baptiste Leran, Luca Francaviglia, Jelena Vukajlovic Plestina, Vladimir Dubrovskii

We demonstrate the existence of two stable contact angles for the gallium droplet on top of self-assisted GaAs nanowires grown by MBE on patterned silicon substrates. Contact angle around 130 degrees fosters a continuous increase in the nanowire radius, wh ...

IEEE2018

Nanoporous silicon tubes: the role of geometry in nanostructure formation and application to light emitting diodes

Anna Fontcuberta i Morral, Heidi Andrea Potts, Luca Francaviglia, Francesca Amaduzzi, Jelena Vukajlovic Plestina

Obtaining light emission from silicon has been the holy grail of optoelectronics over the last few decades. One of the most common methods for obtaining light emission from silicon is to reduce it to a nanoscale structure, for example by producing porous s ...

Institute of Physics2017

Engineering the Size Distributions of Ordered GaAs Nanowires on Silicon

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Maxime Lagier, Wonjong Kim, Martin George Friedl, Heidi Andrea Potts, Jelena Vukajlovic Plestina

Reproducible integration of III-V semiconductors on silicon can open new path toward CMOS compatible optoelectronics and novel design schemes in next generation solar cells. Ordered arrays of nanowires could accomplish this task, provided they are obtained ...

2017

Tilting Catalyst-Free InAs Nanowires by 3D-Twinning and Unusual Growth Directions

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Jean-Baptiste Leran, Youri Louis Winandus Van Hees

Controlling the growth direction of nanowires is of strategic importance both for applications where nanowire arrays are contacted in parallel and for the formation of more complex nanowire networks. We report on the existence of tilted InAs nanowires on ( ...

American Chemical Society2017

Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Nicholas Paul Morgan

The need for indium droplets to initiate self-catalyzed growth of InAs nanowires has been highly debated in the last few years. Here, we report on the use of indium droplets to tune the growth direction of self-catalyzed InAs nanowires. The indium droplets ...

Institute of Physics2017

Gold-free Growth of InAs Nanowires : Growth, Structural & Electrical Properties

Heidi Andrea Potts

Semiconductor nanowires are interesting building blocks for a variety of electronic and optoelectronic applications, and they provide an excellent platformto probe fundamental physical effects. For the realization of nanowire based devices, a deep understa ...

EPFL2017

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

Anna Fontcuberta i Morral, Sonia Conesa Boj, Heidi Andrea Potts

In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the int ...

American Chemical Society2016

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires

Anna Fontcuberta i Morral, Federico Matteini, Gözde Tütüncüoglu, Esther Alarcon Llado, Francesca Amaduzzi, Martin George Friedl, Heidi Andrea Potts

III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as In As and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, ...

American Chemical Society2016

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Anna Fontcuberta i Morral, Federico Matteini, Gözde Tütüncüoglu, Heidi Andrea Potts, Dmitry Mikulik, Jean-Baptiste Leran, Jelena Vukajlovic Plestina, William Craig Carter

Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is known to have a strong influence on nanowire growth and orientation and therefore ...

American Chemical Society2016

Page 2 sur 3

Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality

Anna Fontcuberta i Morral, Lucas Güniat, Mahdi Zamani, Gözde Tütüncüoglu, Martin George Friedl, Heidi Andrea Potts, Jean-Baptiste Leran, Wonjong Kim, Luca Francaviglia, Vladimir Dubrovskii

2018