Personne

Ian Michael Rousseau

Publications associées (6)

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Gas pressure measurement device

Ian Michael Rousseau, Pirouz Sohi

The present invention concerns vacuum pressure gauge or gas pressure measurement device comprising a polar semiconductor structure, at least one light source for illuminating a surface of the polar semiconductor structure, measurement means configured to m ...

2019

III-Nitride Semiconductor Photonic Nanocavities on Silicon

Ian Michael Rousseau

Optical nanocavities enhance light-matter interaction due to their high quality factors (Q) and small modal volumes (V). The control of light-matter interaction lies at the heart of potential applications for integrated optical circuits, including optical ...

EPFL2018

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The mechanisms contributing to experimental quality factors of shortwavelength (lambda = 440-480 nm) III-nitride on silicon one-dimensional photonic crystal cavities were quantified. Fluctuations in fundamental and first-order cavity mode wavelength and qu ...

Amer Physical Soc2017

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We optimized the far-field emission pattern of one-dimensional photonic crystal nanobeams by modulating the nanobeam width, forming a sidewall Bragg cross-grating far-field coupler. By setting the period of the cross-grating to twice the photonic crystal p ...

Amer Inst Physics2016

Fabrication defects and grating couplers in III-nitride photonic crystal nanobeam lasers (Conference Presentation)

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Ian Michael Rousseau

We report a numerical and experimental investigation of fabrication tolerances and outcoupling in optically pumped III-nitride nanolasers operating near lambda = 460 nm, in which feedback is provided by a one-dimensional photonic crystal nanobeam cavity an ...

Spie-Int Soc Optical Engineering2016

Thresholdless Lasing of Nitride Nanobeam Cavities on Silicon

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Ian Michael Rousseau, Noelia Vico Triviño, Gordon Jens Callsen

We present a temperature dependent optical and quantum-optical characterization of close-to-ideal lasing in GaN-based nanobeam cavities. Measuring the photon statistics of emission allows us to prove high-beta lasing at room temperature, and thresholdless ...

Ieee2016