Publications de Josua Andreas Stückelberger

Pre-annealing for improved LPCVD deposited boron-doped poly-Si hole-selective contacts

Franz-Josef Haug, Luca Massimiliano Antognini, Josua Andreas Stückelberger, Xinyu Zhang, Zhao Wang, Jie Yang

We demonstrate the beneficial effect of a pre-annealing step prior to the boron diffusion on passivation and contact resistivity of industrially LPCVD deposited poly-Si/SiOX hole-selective contacts. We investigate the influence of the pre-annealing tempera ...

ELSEVIER2023

A Mixed-Phase SiOx Hole Selective Junction Compatible With High Temperatures Used in Industrial Solar Cell Manufacturing

Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Xavier Niquille, Andrea Ingenito, Philippe Wyss, Matthieu Despeisse, Mario Joe Lehmann, Gizem Nogay, Josua Andreas Stückelberger

We present a p-type passivating rear contact that complies with integration into standard solar cell manufacturing with phosphorus-diffused front side. Our contact structure consists of a thin SiOx tunneling layer grown by wet chemistry and a stack of laye ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells

Christophe Ballif, Andrea Ingenito, Franz-Josef Haug, Matthieu Despeisse, Gizem Nogay, Philipp Friedrich Hermann Löper, Philippe Wyss, Josua Andreas Stückelberger, Luca Gnocchi

We present an electron selective passivating contact based on a tunneling SiOx capped with a phosphorous doped siliconcarbideandpreparedwithahigh-temperaturethermalanneal. We investigate in detail the effects of the preparation conditions of theSiCx(n)(i.e ...

2018

Transparent Passivating Contacts for Front Side Application in Crystalline Silicon Solar Cells

Josua Andreas Stückelberger

In this thesis, we present the development and characterization of novel approaches to carrier-selective passivating contacts for crystalline silicon (c-Si) solar cells. In our first approach, we benefit from a wide-bandgap material, namely mixed-phase sil ...

EPFL2018

Recombination Analysis of Phosphorus-Doped Nanostructured Silicon Oxide Passivating Electron Contacts for Silicon Solar Cells

Christophe Ballif, Franz-Josef Haug, Andrea Ingenito, Matthieu Despeisse, Gizem Nogay, Philipp Friedrich Hermann Löper, Philippe Wyss, Josua Andreas Stückelberger

2018

Surface Defect Passivation of Silicon Micropillars

Anna Fontcuberta i Morral, Franz-Josef Haug, Josua Andreas Stückelberger, Dmitry Mikulik, Pablo Romero Gómez, Riad Berrazouane

2018

Properties of mixed phase silicon-oxide-based passivating contacts for silicon solar cells

Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Andrea Ingenito, Matthieu Despeisse, Gizem Nogay, Philipp Friedrich Hermann Löper, Philippe Wyss, Josua Andreas Stückelberger, Iris Anita Mack

2018

Crystalline Silicon Solar Cells With Coannealed Electron- and Hole-Selective SiCx Passivating Contacts

Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Andrea Ingenito, Monica Morales Masis, Gizem Nogay, Philipp Friedrich Hermann Löper, Philippe Wyss, Oscar Esteban Rucavado Leandro, Josua Andreas Stückelberger

We present electron- and hole-selective passivating contacts based on wet-chemically grown interfacial SiOx and overlying in-situ doped silicon carbide (SiCx) deposited by plasma-enhanced chemical vapor deposition. After annealing at 850 degrees C, excelle ...

2018

A passivating contact concept compatible with a short thermal treatment

Christophe Ballif, Franz-Josef Haug, Andrea Ingenito, Matthieu Despeisse, Gizem Nogay, Philippe Wyss, Josua Andreas Stückelberger

In this study we present a boron-doped silicon carbide layers as a hole-selective contact which is compatible with short annealing time (typically < 1 minute) as the one used for firing of metal pastes. The application of such layers on symmetrically proce ...

IEEE2018

Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films

Christophe Ballif, Gizem Nogay, Franz-Josef Haug, Matthieu Despeisse, Monica Morales Masis, Philipp Friedrich Hermann Löper, Philippe Wyss, Oscar Esteban Rucavado Leandro, Josua Andreas Stückelberger

We present a detailed optimization of a hole selective rear contact for p-type crystalline silicon solar cells which relies on full-area processes and provides full-area passivation. The passivating hole-contact is based on a layer stack comprising a chemi ...

Elsevier Science Bv2017