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Josua Andreas Stückelberger

Cette personne n’est plus à l’EPFL

Publications associées (10)

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Pre-annealing for improved LPCVD deposited boron-doped poly-Si hole-selective contacts

Franz-Josef Haug, Luca Massimiliano Antognini, Josua Andreas Stückelberger, Xinyu Zhang, Zhao Wang, Jie Yang

We demonstrate the beneficial effect of a pre-annealing step prior to the boron diffusion on passivation and contact resistivity of industrially LPCVD deposited poly-Si/SiOX hole-selective contacts. We investigate the influence of the pre-annealing tempera ...

ELSEVIER2023

A Mixed-Phase SiOx Hole Selective Junction Compatible With High Temperatures Used in Industrial Solar Cell Manufacturing

Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Xavier Niquille, Andrea Ingenito, Matthieu Despeisse, Gizem Nogay, Philippe Wyss, Mario Joe Lehmann, Josua Andreas Stückelberger

We present a p-type passivating rear contact that complies with integration into standard solar cell manufacturing with phosphorus-diffused front side. Our contact structure consists of a thin SiOx tunneling layer grown by wet chemistry and a stack of laye ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Transparent Passivating Contacts for Front Side Application in Crystalline Silicon Solar Cells

Josua Andreas Stückelberger

In this thesis, we present the development and characterization of novel approaches to carrier-selective passivating contacts for crystalline silicon (c-Si) solar cells. In our first approach, we benefit from a wide-bandgap material, namely mixed-phase sil ...

EPFL2018

Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells

Christophe Ballif, Franz-Josef Haug, Andrea Ingenito, Matthieu Despeisse, Gizem Nogay, Philipp Friedrich Hermann Löper, Philippe Wyss, Josua Andreas Stückelberger, Luca Gnocchi

We present an electron selective passivating contact based on a tunneling SiOx capped with a phosphorous doped siliconcarbideandpreparedwithahigh-temperaturethermalanneal. We investigate in detail the effects of the preparation conditions of theSiCx(n)(i.e ...

2018

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We present electron- and hole-selective passivating contacts based on wet-chemically grown interfacial SiOx and overlying in-situ doped silicon carbide (SiCx) deposited by plasma-enhanced chemical vapor deposition. After annealing at 850 degrees C, excelle ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

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In this study we present a boron-doped silicon carbide layers as a hole-selective contact which is compatible with short annealing time (typically < 1 minute) as the one used for firing of metal pastes. The application of such layers on symmetrically proce ...

IEEE2018

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In the present invention a new solar photovoltaic module is proposed comprising a solar cell comprising a silicon layer having a first (1 a) surface and a second surface (1a) opposite to said first surface. The solar cell further comprises a passivating la ...

2017

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We present a detailed optimization of a hole selective rear contact for p-type crystalline silicon solar cells which relies on full-area processes and provides full-area passivation. The passivating hole-contact is based on a layer stack comprising a chemi ...

Elsevier Science Bv2017

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We present a novel passivating contact structure based on a nanostructured silicon-based layer. Traditional poly-Si junctions feature excellent junction characteristics but their optical absorption induces current losses when applied to the solar cell fron ...

Elsevier Science Bv2016

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The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting ...

Amer Chemical Soc2016