Mihai Adrian Ionescu, Saurabh Tomar, Arnab Biswas
This work reports a comparison of high-k AbO(3)/HfO2/Al2O3 dielectric stack Tunnel FETs with both vertical tunneling and lateral tunneling, as non-volatile memory (NVM) cells. Tunnel FET NVM are fabricated and characterized to evaluate their potential as l ...
IEEE2016