Jun Ma

Cette personne n’est plus à l’EPFL

Publications associées (37)

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Fast-switching Tri-Anode Schottky Barrier Diodes for monolithically integrated GaN-on-Si power circuits

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Georgios Kampitsis

Tri-Anode GaN Schottky Barrier Diodes (SBDs) have recently shown excellent DC performance with low turn-on voltage and large breakdown thanks to their 3D contact structure around the two-dimensional electron gas (2DEG) channel. However, the 3D nature of th ...

Institute of Electrical and Electronics Engineers2020

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Luca Nela, Catherine Erine

In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH) while maintaining a low specific on resistance (R ON,SP ) and high current density ...

Institute of Electrical and Electronics Engineers2019

High-performance nanowire-based E-mode Power GaN MOSHEMTs with large workfunction gate metal

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate based on sidewall depletion achieved by nanostructured gate with large work-function metal. ...

Institute of Electrical and Electronics Engineers2019

Novel Slanted Field Plate Technology for GaN HEMTs by Grayscale Lithography on Flowable Oxide

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Taifang Wang

We report a novel process to achieve slanted field plate (S-FP), which is a field plate with a gradual increase thickness from gate edge towards drain - utilizing grayscale lithography on flowable oxide (FOX) in single process step, in which developed FOX ...

IEEE2019

High-performance nanowire-based E-mode Power GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate achieved by a nanostructured gate region in combination with a large work-function gate met ...

IEEE2019

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Giovanni Santoruvo, Taifang Wang

In this paper, we present a detailed investigation of the impact of fin width (w(fin)) on tri-gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). As w(fin) is reduced, the threshold voltage (V-TH) increases, which is due ...

2019

Tri-gate technologies for high-performance power GaN devices

Jun Ma

GaN-based electronic devices have great potential for future power applications, thanks to their wide band-gap, high breakdown electric field, and high electron mobility. In addition, these devices can be integrated on large-size Si substrates and enable n ...

EPFL2019

High-performance normally-off tri-gate GaN power MOSFETs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu

In this work, we present the investigation of the combination of gate recess and tri-gate structures to achieve high performance normally-off GaN-on-Si MOSFETs with high positive threshold voltage ( VTH ), low specific on resistance ( RON,SP ) and high out ...

IEEE2019

Enhanced mineralization of atrazine by surface induced hydroxyl radicals over light-weight granular mixed-quartz sands with ozone

Stefanos Giannakis, Jun Ma, Da Wang, Shuang Song

A light-weight granular mixed-quartz sand (denoted as L-GQS) combined with stirring-assisted bubble column reactor was firstly applied in catalytic ozonation of atrazine. The L-GQS, with a density of 2.36 g cm(-3) and average diameter of ca. of 4 mm, was r ...

PERGAMON-ELSEVIER SCIENCE LTD2019

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Catherine Erine, Kai Cheng, Minghua Zhu

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V BR ) and low ON-resistance (R ON ). The multi-channel structure was judiciously designed to yield a small sheet resistance (R s ) of 80 Ω/sq using only four 2DEG channels, ...

IEEE2019

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Enhanced mineralization of atrazine by surface induced hydroxyl radicals over light-weight granular mixed-quartz sands with ozone

Stefanos Giannakis, Jun Ma, Da Wang, Shuang Song

PERGAMON-ELSEVIER SCIENCE LTD2019