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Jun Ma

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Publications associées (34)

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Uni-directional GaN-on-Si MOSHEMTs with High Reverse-Blocking Voltage based on Nanostructured Schottky Drain

Elison de Nazareth Matioli, Jun Ma

In this work we present uni-directional GaN-on-Si MOSHEMTs with state-of-the-art reverse-blocking performance. We integrated tri-anode Schottky barrier diodes (SBDs) with slanted tri-gate field plates (FPs) as the drain electrode, and achieved a high rever ...

IEEE2018

Semiconductor devices with multiple channels and three-dimensional electrodes

Elison de Nazareth Matioli, Jun Ma

The present invention relates, for example, to a semiconductor structure containing multiple parallel channels in which several parallel conductive channels are formed within the semiconductor structure. Electric contact or electrostatic control over all t ...

2018

Semiconductor device comprising a three-dimensional field plate

Elison de Nazareth Matioli, Jun Ma

The present invention relates to a Semiconductor device including a first electrode, a second electrode and at least one semiconductor material or layer between the first and second electrode. The semiconductor device further includes at least one field pl ...

2018

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In this letter, we demonstrate a general model to reduce the reverse leakage current (I-R) in high-voltage AlGaN/GaN Schottky diodes (SBDs) by engineering the pinchoff voltage (V-p) of their field plates (FPs). The maximum voltage drop at the Schottky junc ...

Institute of Electrical and Electronics Engineers2017

We present AlGaN/GaN nanostructured Schottky barrier diodes (SBDs) on silicon substrate with high breakdown voltage (V-BR) and low reverse leakage current (I-R), based on a hybrid of tri-anode and tri-gate architectures. The fabricated SBDs presented a sma ...

2017

High Performance Tri-gate GaN Power MOSHEMTs on Silicon Substrate

Elison de Nazareth Matioli, Jun Ma

We demonstrate high-performance GaN power metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on silicon substrate based on a nanowire tri-gate architecture. The common issue of partial removal of carriers by nanowire etching in GaN tri ...

2017

Reactions of hypoiodous acid with model compounds and the formation of iodoform in absence/presence of permanganate

Urs von Gunten, Jun Ma

The kinetics for the reactions of hypoiodous acid (HOI) with various phenols (phenol, 4-nitrophenol, 4-hydroxybenzoic acid), 3-oxopentanedioic acid (3-OPA) and flavone were investigated in the pH range of 6.0-11.0. The apparent second order rate constants ...

Pergamon-Elsevier Science Ltd2017

Slanted Tri-gates for High-Voltage GaN Power Devices

Elison de Nazareth Matioli, Jun Ma

In this letter, we introduce and demonstrate the concept of slanted tri-gates to enhance the breakdown voltage (V-BR) in lateral GaN power devices. Conventionally, field plates (FPs) are used to enhance the V-BR by distributing more homogeneously the elect ...

Institute of Electrical and Electronics Engineers2017

Nitrate formation during ozonation as a surrogate parameter for abatement of micropollutants and the N-nitrosodimethylamine (NDMA) formation potential

Urs von Gunten, Florian Frédéric Vincent Breider, Jun Ma, Yang Song

In this study, nitrate formation from ammonium and/or dissolved organic nitrogen (DON) was investigated as a novel surrogate parameter to evaluate the abatement of micropollutants during ozonation of synthetic waters containing natural organic matter (NOM) ...

Elsevier2017

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In this letter, we present high-performance GaN-on-Si metal-oxide-semiconductor high electron mobility transistors with record reverse-blocking (RB) capability. By replacing the conventional ohmic drain with a hybrid tri-anode Schottky drain, a high revers ...

2017