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We present a lumped devices network approach to simulate surface recombination effects in optoelectronics devices. The network is composed of generalized lumped devices where the excess carrier concentrations and gradients are mapped on electrical quantiti ...
Modeling photoelectric effects in semiconductors with electrical simulators is demonstrated in typical 1-D and 2-D architectures. The concept is based on a coarse meshing of the semiconductor with the so-called generalized lumped devices, where equivalent ...
Modeling of optoelectronic devices involves long and complex numerical simulations, usually performed with TCAD tools. Numerical simulations provide accurate results for a single device but are not feasible when dealing with a full circuit comprising sever ...
SPIE-INT SOC OPTICAL ENGINEERING2020
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We present SPICE simulations of a CMOS APS pixel element consisting of the optical sensor with the sensing circuit. The photodiode is simulated at the physics level by means of the so-called Generalized Devices, without any predefined compact model. Conver ...
2020
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We present SPICE simulations of a CMOS APS pixel element consisting of the optical sensor and the circuit. The photodiode is simulated at the physics level by means of the so-called generalized devices, without any predefined compact model. Conversely, reg ...
IEEE2019
Modeling the interaction of ionizing radiation, either light or ions, in integrated circuits is essential for the development and optimization of optoelectronic devices and of radiation-tolerant circuits. Whereas for optical sensors photogenerated carriers ...
