Publications de Alessandro Pezzotta

XXXIV. The effect of linear redshift-space distortions in photometric galaxy clustering and its cross-correlation with cosmic shear

Frédéric Courbin, Georges Meylan, Gianluca Castignani, Maurizio Martinelli, Malte Tewes, Slobodan Ilic, Alessandro Pezzotta, Yi Wang, Richard Massey, Fabio Finelli

Context. The cosmological surveys that are planned for the current decade will provide us with unparalleled observations of the distribution of galaxies on cosmic scales, by means of which we can probe the underlying large-scale structure (LSS) of the Univ ...

Edp Sciences S A2024

A 49 mu W 6th-Order Chebyshev SSF-based Low-Pass Analog Filter for IEEE 802.11ax

Christian Enz, Alessandro Pezzotta, Daniel Mathias Bold, Salvatore Collura

In this paper a continuous-time low-pass analog filter based on the Cascoded Super Source Follower (C-SSF) architecture, implemented in a 28-nm bulk CMOS process, is presented. The target application is the transceiver analog baseband for the next-generati ...

IEEE2020

Hardware Acceleration of HDR-Image Tone Mapping on an FPGA-CPU Platform Through High-Level Synthesis

Christian Enz, Vincent Frédéric Camus, Alessandro Pezzotta, Jérémy Lucien Maurice Schlachter, Mattia Cacciotti

In this paper, the hardware acceleration of a tone-mapping algorithm for High-Dynamic-Range image processing is presented. Starting from the C++ source code, High-Level Synthesis has been performed using Xilinx SDSoC for a Xilinx Zynq SoC device. After an ...

IEEE2018

Charge-Based Distortion Analysis of Nanoscale MOSFETs

Christian Enz, Francesco Chicco, Alessandro Pezzotta

This paper presents a study of MOSFETs' linearity, exploiting a simplified version of the charge-based EKV model. It allows to deduce analytically the one-tone and two-tone harmonic distortions introduced by the nonlinear ID-VG MOSFET characteristic as a f ...

2018

A Design-oriented Charge-based Simplified Model for FDSOI MOSFETs

Christian Enz, Farzan Jazaeri, Alessandro Pezzotta, Louis Hutin

In this paper a design-oriented model for asymmetrical double-gate (ADG) MOSFETs is proposed. Including the back-gate effect into the original simplified EKV bulk model requires only one additional parameter to the existing four, and extends the simplified ...

2018

Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs

Christian Enz, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

In this paper, a comprehensive charge-based predictive model of interface and oxide trapped charges in undoped symmetric long-channel double-gate MOSFETs is developed. The model involves essentially no fitting parameters, but first-principle calculations o ...

2018

Total ionizing dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad

Chunmin Zhang, Alessandro Pezzotta

This paper presents the results of an irradiation study on single transistors manufactured in a 28 nm high-k commercial CMOS technology up to 1 Grad. Both nMOSFET and pMOSFET transistors have been irradiated and electrical parameters have been measured. Fo ...

2017

Carrier Mobility Extraction in FETs

Christian Enz, Farzan Jazaeri, Alessandro Pezzotta

In this paper, we propose an accurate method to extract the free carrier mobility in FETs. This derivation relies only on the drift-diffusion transport model without the need to predefine the gate-voltage-mobility dependence. This approach has been assesse ...

Institute of Electrical and Electronics Engineers2017

Nanoscale MOSFET Modeling: Part 2: Using the Inversion Coefficient as the Primary Design Parameter

Christian Enz, Alessandro Pezzotta, Francesco Chicco

Institute of Electrical and Electronics Engineers2017

Nanoscale MOSFET Modeling: Part 1: The Simplified EKV Model for the Design of Low-Power Analog Circuits

Christian Enz, Alessandro Pezzotta, Francesco Chicco

Institute of Electrical and Electronics Engineers2017