Publications de Preethi Padmanabhan

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes

This article introduces a modular, direct time-of-flight (TOF) depth sensor. Each module is digitally synthesized and features a 2

\times

\times

8) single-photon avalanche diode (SPAD) pixel array, an edge-sensitive decision tree, a shared time-to ...

2019

Preethi Padmanabhan

Graph Chatbot

Chattez avec Graph Search

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Oscillator arrangement for time-to-digital converter for large array of time-of-flight image sensor devices

Photon detecting 3d imaging sensor device

Modeling and Analysis of a Direct Time-of-Flight Sensor Architecture for LiDAR Applications

Mutually Coupled Time-to-Digital Converters (TDCs) for Direct Time-of-Flight (dTOF) Image Sensors

A 256×256 45/65nm 3D-stacked SPAD-based direct TOF image sensor for LiDAR applications with optical polar modulation for up to 18.6dB interference suppression

High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

A back-illuminated 3D-stacked single-photon avalanche diode in 45nm CMOS technology, 2017 IEEE International Electron Devices Meeting (IEDM)

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

A 256×256 45/65nm 3D-stacked SPAD-based direct TOF image sensor for LiDAR applications with optical polar modulation for up to 18.6dB interference suppression

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Oscillator arrangement for time-to-digital converter for large array of time-of-flight image sensor devices

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Modeling and Analysis of a Direct Time-of-Flight Sensor Architecture for LiDAR Applications

A back-illuminated 3D-stacked single-photon avalanche diode in 45nm CMOS technology, 2017 IEEE International Electron Devices Meeting (IEDM)

High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

Mutually Coupled Time-to-Digital Converters (TDCs) for Direct Time-of-Flight (dTOF) Image Sensors

Photon detecting 3d imaging sensor device