GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...
Kirigami, the ancient technique of paper cutting, has been successfully applied to enhance the stretchability and ductility of nanoscale graphene. However, existing experimentally realized graphene kirigami (GK) are created by introducing parallel cuts, ex ...
An indium-containing layer positioned underneath the InGaN/GaN quantum well (QW) active region is commonly used in high efficiency blue light-emitting diodes. Recent studies proposed that the role of this underlayer is to trap surface defects (SDs), which, ...
We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n(++)-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (
In this paper, we investigate the nature of surface defects originating from the high-temperature (HT) GaN buffer and their incorporation into InGaN quantum wells (QWs) grown using the metalorganic vapor phase epitaxy technique. In particular, we conduct a ...
