Publications de Didem Dede | EPFL Graph Search

Scalable Receivers Based on Horizontally-grown InAs Nanowires Promise All-fiber Terahertz Spectrometer Systems

Anna Fontcuberta i Morral, Didem Dede, Valerio Piazza, Victor Carle Adrien Boureau, Nicholas Paul Morgan

Nanowire-based terahertz photoconductive receivers offer many advantages over the existing bulk-based receivers, such as the capability of measuring the full terahertz polarization state and integrating into micro/nano-systems. However, their detection per ...

IEEE Computer Society2024

Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires

Anna Fontcuberta i Morral, Didem Dede, Valerio Piazza, Victor Carle Adrien Boureau, Nicholas Paul Morgan

Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing, spectroscopy and imaging technologies in the decades to come. THz emitters and receivers should thus be simplified in their design and miniaturized to become a commodit ...

Nature Research2024

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

Anna Fontcuberta i Morral, Alok Rudra, Didem Dede, Valerio Piazza, Michele Zendrini

The growth kinetics of vertical III−V nanowires (NWs) were clarified long ago. The increasing aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the material collection. The group III adatom diffusion from the NW sidew ...

American Chemical Society (ACS)2024

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Didem Dede

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

EPFL2024

The implementation of thermal and UV nanoimprint lithography for selective area epitaxy

Anna Fontcuberta i Morral, Alok Rudra, Santhanu Panikar Ramanandan, Didem Dede, Valerio Piazza, Nicholas Paul Morgan

Semiconductor nanowires (NWs) in horizontal configuration could provide a path for scalable NW-based devices. Bottom-up large-scale manufacturing of these nanostructures by selective area epitaxy (SAE) relies on precise nanopatterning of various shapes on ...

2023

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Anna Fontcuberta i Morral, Didem Dede, Valerio Piazza, Nicholas Paul Morgan

Selective area epitaxy is a promising approach to definenanowirenetworks for topological quantum computing. However, it is challengingto concurrently engineer nanowire morphology, for carrier confinement,and precision doping, to tune carrier density. We re ...

AMER CHEMICAL SOC2023

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Anna Fontcuberta i Morral, Alok Rudra, Didem Dede, Valerio Piazza, Nicholas Paul Morgan, Vladimir Dubrovskii, Marie Sophie Sanglé-Ferrière, Ann-Kristin Stief

We outline the growth mechanismand shape evolution of GaAsnanoridges by selective area MOVPE with three well-identified, distinctstages of growth. ...

AMER CHEMICAL SOC2023

Low Dimensional III-V and II-VI Semiconductors

Anna Fontcuberta i Morral, Didem Dede, Nicholas Paul Morgan

Journal Article Low Dimensional III-V and II-VI Semiconductors Get access Didem Dede, Didem Dede École Polytechnique Fédérale de Lausanne. Search for other works by this author on: Oxford Academic Google Scholar Nicholas Morgan, Nicholas Morgan École Polyt ...

Oxford University Press (OUP)2022

Strain induced lifting of the charged exciton degeneracy in monolayer MoS2 on a GaAs nanomembrane

Anna Fontcuberta i Morral, Didem Dede, Valerio Piazza, Mitali Banerjee, Akshay Balgarkashi

Strain is a commonly used tool to tune the optoelectronic properties of semiconductors. It is especially effective for transition metal dichalcogenides (TMDs), which can withstand extreme strain up to 10%. To date, localised strain fields have been applied ...

IOP Publishing Ltd2022

Dataset for "GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays"

Anna Fontcuberta i Morral, Didem Dede, Jean-Baptiste Leran, Wonjong Kim, Nicholas Paul Morgan, Lea Ghisalberti, William Craig Carter, Akshay Balgarkashi

Large-scale patterning for vapor-liquid-solid growth of III-V nanowires is a challenge given the required feature size for patterning (45 to 60 nm holes). In fact, arrays are traditionally manufactured using electron-beam lithography,for which processing t ...

Zenodo2022