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Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Orientation-Controlled Nonradiative Energy Transfer to Colloidal Nanoplatelets: Engineering Dipole Orientation Factor

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Orientation-Controlled Nonradiative Energy Transfer to Colloidal Nanoplatelets: Engineering Dipole Orientation Factor

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires