Person

Didem Dede

Related publications (9)

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

EPFL2024

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Anna Fontcuberta i Morral, Alok Rudra, Didem Dede, Valerio Piazza, Vladimir Dubrovskii, Nicholas Paul Morgan, Marie Sophie Sanglé-Ferrière, Ann-Kristin Stief

We outline the growth mechanismand shape evolution of GaAsnanoridges by selective area MOVPE with three well-identified, distinctstages of growth. Selective area epitaxy at the nanoscale enables fabricationofhigh-quality nanostructures in regular arrays wi ...

AMER CHEMICAL SOC2023

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Anna Fontcuberta i Morral, Didem Dede, Valerio Piazza, Nicholas Paul Morgan

Selective area epitaxy is a promising approach to definenanowirenetworks for topological quantum computing. However, it is challengingto concurrently engineer nanowire morphology, for carrier confinement,and precision doping, to tune carrier density. We re ...

AMER CHEMICAL SOC2023

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Anna Fontcuberta i Morral, Lucas Güniat, Didem Dede, Valerio Piazza, Elif Nur Dayi, Martin George Friedl, Vladimir Dubrovskii, Nicholas Paul Morgan, Akshay Balgarkashi

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

IOP Publishing Ltd2022

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Anna Fontcuberta i Morral, Didem Dede, Valerio Piazza, Raphaël François Lemerle, Jean-Baptiste Leran, Wonjong Kim, Nicolas Tappy, Nicholas Paul Morgan, Akshay Balgarkashi, Titouan Charvin

III-V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si techno ...

AMER CHEMICAL SOC2022

Remote Doping of Scalable Nanowire Branches

Anna Fontcuberta i Morral, Didem Dede, Martin George Friedl, Wonjong Kim, Nicholas Paul Morgan

Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier densi ...

2020

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Anna Fontcuberta i Morral, Lucas Güniat, Santhanu Panikar Ramanandan, Didem Dede, Martin George Friedl, Jean-Baptiste Leran, Wonjong Kim, Nicolas Tappy, Akshay Balgarkashi

Embedding quantum dots in nanowires (NWs) constitutes one promising building block for quantum photonic technologies. Earlier attempts to grow InAs quantum dots on GaAs nanowires were based on the Stranski-Krastanov growth mechanism. Here, we propose a nov ...

IOP PUBLISHING LTD2020

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Anna Fontcuberta i Morral, Lucas Güniat, Santhanu Panikar Ramanandan, Didem Dede, Martin George Friedl, Jean-Baptiste Leran, Wonjong Kim, Nicolas Tappy, Akshay Balgarkashi

Raw dataset and image files used for the publication ...

2020

Orientation-Controlled Nonradiative Energy Transfer to Colloidal Nanoplatelets: Engineering Dipole Orientation Factor

Didem Dede, Ibrahim Tanriöver

We proposed and showed strongly orientation-controlled Forster resonance energy transfer (FRET) to highly anisotropic CdSe nanoplatelets (NPLs). For this purpose, we developed a liquidair interface self-assembly technique specific to depositing a complete ...

2019

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