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Micro 3D printing of a functional MEMS accelerometer

Publications associées (32)

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Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing

Elison de Nazareth Matioli, Andras Kis, Andreas Schueler, Anna Krammer, Philip Johannes Walter Moll, Guilherme Migliato Marega, Reza Soleiman Zadeh Ardebili, Mohammad Samizadeh Nikooytabalvandani

Metal–oxide–semiconductor junctions are the building blocks of modern electronics and can provide a variety of functionalities, from memory to computing. The technology, however, faces constraints in terms of further miniaturization and compatibility with ...

2022

Silicon photonic microelectromechanical systems add-drop ring resonator in a foundry process

Niels Quack, Hamed Sattari, Alain Yuji Takabayashi

Photonic add-drop filters are crucial components for the implementation of wavelength division multiplexing (WDM) in fiber-optic communication systems. The recent progress in photonic integration has shown the potential to integrate photonic add-drop filte ...

SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS2022

Electrical Spectroscopy of Defect States in Synthetic 2D Materials

Yanfei Zhao

Two-dimensional (2D) materials such as graphene and transition metal dichalcogenide (TMDC) are considered as one of the most promising material platforms for future electronic devices, due to their ultra-thin thickness and fascinating electrical and optica ...

EPFL2022

Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography

Jürgen Brugger, Giovanni Boero, Xia Liu, Ana Conde Rubio

The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their integrat ...

2022

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Anna Fontcuberta i Morral, Lucas Güniat, Didem Dede, Valerio Piazza, Martin George Friedl, Elif Nur Dayi, Nicholas Paul Morgan, Akshay Balgarkashi, Vladimir Dubrovskii

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

IOP Publishing Ltd2022

Ultra low quantum decoherence nano-optomechanical systems

Mohammadjafar Bereyhi

Thermal motion of a room-temperature mechanical resonator typically dominates the quantum backaction of its position measurement. This is a longstanding barrier for exploring cavity optomechanics at room temperature. In order to enter the quantum regime of ...

EPFL2022

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

Remco Franciscus Peter van Erp

Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

EPFL2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Scalable fabrication of functional nanostructures on stretchable substrates by capillary-assisted particle assembly and adhesion lithography

Henry Shao-Chi Yu

The fabrication of metallic nanostructures on stretchable substrates enables specific applications that exploit the combination of the nano-scale phenomena and the mechanical tunability of the physical dimensions of the nanostructures. Due to the large dif ...

EPFL2022

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

Nicolas Grandjean, Jean-François Carlin, Mauro Mosca, Camille Haller

III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, ...

SPIE-INT SOC OPTICAL ENGINEERING2022

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Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

Remco Franciscus Peter van Erp

EPFL2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

EPFL2022

Scalable fabrication of functional nanostructures on stretchable substrates by capillary-assisted particle assembly and adhesion lithography

Henry Shao-Chi Yu

EPFL2022

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

Nicolas Grandjean, Jean-François Carlin, Mauro Mosca, Camille Haller

SPIE-INT SOC OPTICAL ENGINEERING2022