Growth of Gainas(P) and Gainasp/Gainas Mqw Structures by Cbe
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We study in this thesis the structural origin of defect insensitive light emission in indium containing group-III nitride ternary alloys grown on sapphire, which are the active materials for the commercially available high brightness blue diodes. These str ...
Gallium nitride (GaN) is one of the most interesting materials for devices applications such as blue light emitting diodes, laser diodes and high power and high temperature electronic applications, because of its large band gap (3.39 eV). Several growth te ...
The growth of GaAs nanowires by the gallium-assisted method with molecular beam epitaxy (MBE) is presented in this review article. The structure of the grown nanowires was investigated by means of scanning and transmission electron microscopy as well as Ra ...
The fabrication of nanostructures using III-V semiconductors results in materials with different physical properties than the bulk materials. Their optical and electronic properties are tailored and developed on a large scale for the fabrication of optical ...
Odd electron diffraction patterns (EDPs) have been obtained by transmission electron microscopy (TEM) on silicon nanowires grown via the vapour-liquid-solid method and on silicon thin films deposited by electron beam evaporation. Many explanations have bee ...
The nanoindentation fracture behavior of gallium arsenide (GaAs) is examined from two perspectives in two parent papers. The first paper (part I) focuses on in situ nanoindentation within a scanning electron microscope (SEM) and on fractographic observatio ...
Bright-field (BF) and annular dark-field (ADF) electron tomography in the transmission electron microscope (TEM) are used to characterize elongated porous regions or cracks (simply referred to as cracks thereafter) in micro-crystalline silicon (μc-Si:H) so ...
InAs quantum dot arrays are obtained on GaAs nanowire facets by molecular beam epitaxy. The GaAs nanowires are first grown by the gallium-assisted catalyst-free method. Decoration of the nanowire facets with InAs quantum dots is achieved only when the face ...
As screen printed contacts are the predominant metallisation technique in industrial production of Si solar cells, a better understanding of their properties is necessary. In this work, we show that high-quality cross-sectional samples can be prepared, who ...
We report on the epitaxial growth of high quality GaN films on Si(111) substrates by molecular beam epitaxy using ammonia. The surface morphology and crystallinity of thick undoped GaN films are characterized by reflection high-energy electron diffraction ...