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The purpose of my thesis is to provide a theoretical analysis of the dynamics of optically excited carriers in semiconductor confined systems. In particular, I will focus the investigations on the effects due to the presence of a strong electron-hole Coulo ...
We report the optical properties of high quality V-groove GaAs/Al0.3Ga0.7.As quantum wires (QWRs) with different thicknesses of the GaAs layer. The systematic investigation of photoluminescence (PL) and photoluminescence excitation (PLE) spectra as a funct ...
I report on the effect of a moderate excess electron population on nonlinearities in modulation-doped CdTe quantum wells. I show that the electron population does not qualitatively affect the nature of correlations between excitons. In this respect, I brin ...
We present a theoretical model of the time-resolved excitonic photoluminescence in quantum wires. We study the role of disorder and of the exciton-free-carrier interaction on the temperature dependence of the photoluminescence lifetime. We find that at low ...
This thesis presents an experimental study of the energy and time-resolved optical response of chemically prepared CdSe nanoparticles with different sizes, shapes (dots, rods, and tetrapods), and lattice structures (wurtzite and zinc blende). The first par ...
This thesis work contains an experimental study of many-body and cooperative effects in quantum wells. Many-body effects prove important for an understanding of the physical and specifically optical properties of semiconductors. The Coulomb interaction bet ...
In this thesis work, we report scanning near-field optical photoluminescence spectroscopy measurements with at best 200 nm spatial resolution performed on disordered semiconductor V-groove AlGaAs/GaAs quantum wires. In order to interpret the results of the ...
We have studied the effect of disorder on the radiative properties of semiconductor quantum wires by time-resolved photoluminescence spectroscopy. The dependence of the radiative lifetimes is measured over a temperature range extending from 8 to 150 K. At ...
We discuss the temperature dependence of various photoluminescence transitions observed in undoped and doped GaN in the 9 to 300 K range. Samples grown using different techniques have been assessed. The mechanism underlying the various quenching behaviors ...
Using time-resolved photoluminescence, we have investigated the radiative behavior of neutral and negatively charged excitons in CdTe-based quantum wells. We find that the photoluminescence of negatively charged excitons can be well reproduced by a model o ...