Comparison of the Lateral Carrier Transport between a Gaas Single-Quantum-Well and the Algaas Barrier During Cathodoluminescence Excitation
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The effects of background n- and p-type doping on Zn diffusion in GaAs/AlGaAs multilayered structures are investigated by secondary-ion-mass spectrometry and photoluminescence measurements. Zn diffusions are performed at 575 degrees C into Si-doped, Be-dop ...
In the present work, we theoretically investigate the intersubband relaxation of electrons in quantum well systems during photoexcitation using an ensemble Monte Carlo approach. In particular, we compare with recent experimental results by Hartig et al. (P ...
Oxygen diffusion is treated in a dense electronically conducting cobaltate pellet blocked ionically on one surface, electronically on the other, and sealed on its cylindrical periphery. A procedure is developed for extracting the chemical diffusion and sur ...
We report the optical properties of high quality V-groove GaAs/Al0.3Ga0.7.As quantum wires (QWRs) with different thicknesses of the GaAs layer. The systematic investigation of photoluminescence (PL) and photoluminescence excitation (PLE) spectra as a funct ...
Identical GaAs/Al0.2Ga0.8As multiple-quantum-well (MQW) structures uniformly doped with Si at various concentrations ranging from 1x10(17) to 1X10(19) cm(-3) are grown by molecular-beam epitaxy to study the effects of the background Si-doping level on the ...
This thesis deals with the monolithic integration of long wavelength (1.3-1.55 µm) p-i-n photodiodes with HEMT field effect transistors for the realization of wide bandwidth OEIC receivers for lightwave communication systems. Part of this work was carried ...
In a recent paper, we measured the hole diffusion length in a single quantum well (SQW) by a novel method using SEM-cathodoluminescence, assuming that the carriers diffuse only in the SQW. This assumption needs to be checked. Therefore, we present here a m ...
Semiconductor quantum wires (QWRs) are promising structures for optoelectronics applications, since they can provide quantum confinement for charge carriers in two dimensions. The advantage that they offer over conventional quantum wells (QWs) is due to th ...
Thermally detected optical absorption measurements have been performed at liquid helium temperature in order to study the effects of In segregation on the optical properties of InxGa1-xAs/GaAs quantum wells grown by molecular-beam epitaxy under various gro ...
Although a rigorous definition of growth-limiting substrate relies on a kinetic anal., a simple stoichiometric anal. based on the calcn. of the conversion is more applicable. Anal. of single and dual limitations is based on a simulated example for a substr ...