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Femtosecond luminescence measurements of the intersubband scattering rate in AlxGa1-xAs/GaAs quantum wells under selective excitation

Publications associées (52)

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A model for the multi-exponential excited-state decay of CdSe nanocrystals

Majed Chergui, Frank van Mourik, Awos Al Salman

We report on photoluminescence decay measurements of CdSe nanoparticles over several decades of intensities and times, and as a function of size and temp. A model is proposed for the multi-exponential decay kinetics, and their temp. dependence, in which a ...

2009

Search for B→πℓ+ℓ- decays at Belle

Olivier Schneider, Mingkui Wang, Chao Wang, Tagir Aushev, Vladislav Balagura, Jean Wicht, Sun Hee Kim, Ji Hyun Kim

We present a search for the decays B+→π+ℓ+ℓ- and B0→π0ℓ+ℓ-, where ℓ+ℓ- is either a μ+μ- or e+e- pair, with a data sample of 657×106 BB̄ pairs collected with the Belle detector at the KEKB e+e- collider. Signal events are reconstructed from a charged or a n ...

2008

Large time decay and scattering for Wave Maps

Joachim Krieger

Let u : R3+1 -> H-2 be a Wave Map with smooth compactly supported initial data satisfying the smallness condition parallel to u[0]parallel to ((H) over dot3/2 x (H) over dot1/2) < epsilon for a sufficiently small epsilon > 0. In particular, the Wave Map ex ...

International Press2008

Dynamics of quantum dot lasers

Pablo Moreno

The exceptional performance of self-assembled Quantum Dot (QD) materials renders them extremely appealing for their use as optical communications devices. As lasers, they feature reduced and temperature independent threshold current and proper emission wav ...

EPFL2008

Modeling of gain and phase dynamics in quantum dot amplifiers

Benoît Marie Joseph Deveaud, Marco Rossetti, Pablo Moreno

By means of an electron hole rate equation model we explain the phase dynamics of a quantum dot semiconductor optical amplifier and the appearance of different decay times observed in pump and probe experiments. The ultrafast hole relaxation leads to a fir ...

Springer US2008

Radiative lifetime in wurtzite GaN/AIN quantum dots

Nicolas Grandjean

We study wurtzite GaN/AIN quantum dots (QDs) by time-resolved photoluminescence. The properties of nitride based nano-objects are significantly affected by strong built-in electric fields existing in this crystalline phase. These fields induce a spatial se ...

Wiley-Blackwell2007

Picosecond cathodoluminescence

We have developed an original time resolved cathodoluminescence (TRCL) set-up with temporal performances similar to those of conventional time resolved optical techniques, keeping the capability to get structural information through the secondary electron ...

EPFL2005

Dynamics and coherent effects on high density plasmas in semiconductor nanostructures

Lars Kappei

This thesis work contains an experimental study of many-body and cooperative effects in quantum wells. Many-body effects prove important for an understanding of the physical and specifically optical properties of semiconductors. The Coulomb interaction bet ...

EPFL2005

Time-dependent CP-violating asymmetries in b→sq q transitions

Olivier Schneider, Aurelio Bay, Mingkui Wang, Chao Wang, Tagir Aushev, Lei Zhang, Sun Hee Kim, Sanjeev Kumar, Jing Li

We present new measurements of CP-violation parameters in B0→K0, K+K-KS0, f0(980)KS0, η′KS0, ωKS0, and KS0π0 decays based on a sample of 275×106 BB̄ pairs collected at the Υ(4S) resonance with the Belle detector at the KEKB energy-asymmetric e+e- collider. ...

2005

Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes

Nicolas Grandjean

We analyze the room temperature photoluminescence properties of several multilayer stackings of GaN/AlN quantum dots. We report drastic differences of emission energies and linewidths between continuous wave and time-resolved photoluminescence experiments. ...

2004