Local quantification of the composition in GaAs/AlxGa1-xAs structures by thickness fringe analysis
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The field of photonic crystals is a rapidly developing branch of modern optics. Photonic crystals are believed to be the cornerstone for a wide range of new photonic devices controlling the confinement and propagation of light. These artificial structures ...
A large number of characterization tools for semiconductor based heterostructures are available nowadays. Most of these techniques deliver high temporal resolution (down to hundreds of femtoseconds) or good spatial resolution (down to sub nanometer resolut ...
The fabrication of nanostructures using III-V semiconductors results in materials with different physical properties than the bulk materials. Their optical and electronic properties are tailored and developed on a large scale for the fabrication of optical ...
We report on studies of extended defects in electron-beam-pumped Zn1-xCdxSe/ZnSe blue and blue-green laser structures. To establish a direct correlation between the local luminescence properties and the presence of structural defects, the same thin foil sa ...
Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
Single crystals of layered semiconductors such as WS2 and MoS2 have already proven their efficiency as active elements in photovoltaic cells. Due to their high optical absorption coefficient in the visible range, these materials could be used in the form o ...
We present a theoretical study of the physical characteristics of metal/semiconductor junctions. Using first principle pseudopotential calculations, we have investigated the nature of electronic states with energies within the semiconductor band gap of rep ...
The objective of this paper is to present the fundamental phenomena occurring during the scribing and subsequent fracturing process usually performed when preparing surfaces of brittle semiconductors. In the first part, an overview of nano-scratching exper ...
Microcavity comprising two reflectors, at least one semiconductor layer separating said reflectors and a semiconductor quantum well wherein at least one of said reflectors and of said at least one semiconductor layer comprises a structure which is adjusted ...
An electrically pumped VCSEL (10) and a method of its fabrication are presented. The VCSEL (10) comprises an active cavity material (14) sandwiched between top and bottom DBR stacks (12a, 12b), the top DBR (12b) having at least one n-semiconductor layer. T ...