Effects of background n- and p-type doping on Zn diffusion in GaAs AlGaAs multiple-quantum-well structures
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The mechanism of silicon diffusion in GaAs, Al0.3Ga0.7As, and the silicon diffusion-induced layer disordering of multiquantum wells have been studied by photoluminescence, secondary-ion-mass spectroscopy, and transmission electron microscopy across a corne ...
The observation of a wedge-shaped semiconductor specimen by transmission electron microscopy (WTEM) is an interesting alternative to conventional TEM. Information on chemical composition, layer thickness down to atomic resolution, spatial extension of the ...
A review of experimental results obtained by different techniques is presented on the problem of zinc diffusion. Zinc diffusion was carried out on Si-doped GaAs (n almost-equal-to 10(18) cm-3) and on multiple quantum well (MQW) structures. The samples were ...
To study the mechanism of zinc diffusion in GaAs, we diffused zinc from a ZnAs2 source into Si-doped GaAs samples (n almost-equal-to 1.3 X 10(18) cm-3) at different temperatures (from 575-degrees-C up to 700-degrees-C) in sealed evacuated quartz tubes. The ...
The accumulation of oxygen at GaAs/AlGaAs interfacesgrown by molecular beam epitaxy has been established by secondary ion mass spectrometry profiling of GaAs/AlGaAs multilayerstructures. An enhanced oxygen peak was observed at the boundary between GaAs and ...